650V CoolMOS E6 Power Transistor

Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metall Oxide Semiconductor Field Effect Transistor

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500V-900V CoolMOS™ N-Channel Power MOSFET

N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package

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N-CHANNEL 650V Super-Junction Power MOSFET in a TO-220F Plastic Package

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650V N-Channel Super Junction MOSFET

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Superior Avalanche Rugged Technology

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Extremely low switching loss

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