IPD65R600E6价格

参考价格:¥3.8671

型号:IPD65R600E6 品牌:Infineon 备注:这里有IPD65R600E6多少钱,2025年最近7天走势,今日出价,今日竞价,IPD65R600E6批发/采购报价,IPD65R600E6行情走势销售排行榜,IPD65R600E6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPD65R600E6

650V CoolMOS E6 Power Transistor

Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin

Infineon

英飞凌

IPD65R600E6

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPD65R600E6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

IPD65R600E6

Metall Oxide Semiconductor Field Effect Transistor

文件:1.17442 Mbytes Page:18 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

650V CoolMOS E6 Power Transistor

Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin

Infineon

英飞凌

Metall Oxide Semiconductor Field Effect Transistor

文件:1.17442 Mbytes Page:18 Pages

Infineon

英飞凌

IPD65R600E6产品属性

  • 类型

    描述

  • 型号

    IPD65R600E6

  • 功能描述

    MOSFET N-CH 700V 7.3A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-18 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
TO-252
60000
INFINEON/英飞凌
2402+
TO-252
8324
原装正品!实单价优!
Infineon Technologies
21+
PG-TO252-3
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
Infineon/英飞凌
20+
TO-252
16300
终端可免费提供样品,欢迎咨询
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
INFINE0N
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon(英飞凌)
2511
标准封装
7000
电子元器件采购降本30%!原厂直采,砍掉中间差价
INFINEON/英飞凌
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
Infineon/英飞凌
21+
PG-TO252-3
6820
只做原装,质量保证

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