IPD65R600E6价格

参考价格:¥3.8671

型号:IPD65R600E6 品牌:Infineon 备注:这里有IPD65R600E6多少钱,2025年最近7天走势,今日出价,今日竞价,IPD65R600E6批发/采购报价,IPD65R600E6行情走势销售排行榜,IPD65R600E6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IPD65R600E6

650V CoolMOS E6 Power Transistor

Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin

Infineon

英飞凌

IPD65R600E6

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IPD65R600E6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

IPD65R600E6

Metall Oxide Semiconductor Field Effect Transistor

文件:1.17442 Mbytes Page:18 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

650V CoolMOS E6 Power Transistor

Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resultin

Infineon

英飞凌

Metall Oxide Semiconductor Field Effect Transistor

文件:1.17442 Mbytes Page:18 Pages

Infineon

英飞凌

IPD65R600E6产品属性

  • 类型

    描述

  • 型号

    IPD65R600E6

  • 功能描述

    MOSFET N-CH 700V 7.3A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-26 15:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
INFINEON
24+
TO-252
8500
原厂原包原装公司现货,假一赔十,低价出售
INFINEON
25+
TO-252
6000
原厂原装,价格优势
INFINEON/英飞凌
23+
TO-252
50000
全新原装正品现货,支持订货
INFINEON
1708+
TO-252
8500
只做原装进口,假一罚十
Infineon(英飞凌)
24+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
Infineon Technologies
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原装正品,支持实单
三年内
1983
只做原装正品

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