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IPD65R600C6价格
参考价格：￥3.8671
型号：IPD65R600C6 品牌：Infineon 备注：这里有IPD65R600C6多少钱，2025年最近7天走势，今日出价，今日竞价，IPD65R600C6批发/采购报价，IPD65R600C6行情走势销售排行榜，IPD65R600C6报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD65R600C6 | 650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 |  |   |
IPD65R600C6 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPD65R600C6 | Material Content Data Sheet 文件：33.26 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
Material Content Data Sheet 文件：33.26 Kbytes Page：1 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel MOSFET Transistor • DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | | |
Isc N-Channel MOSFET Transistor • FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | | |
IPD65R600C6产品属性
- 类型
描述
- 型号
IPD65R600C6
- 功能描述
MOSFET 650V CoolMOS C6 Power Transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
20+ |
DPAK(TO-252) |
22500 |
终端可免费提供样品,欢迎咨询 |
|||
Infineon Technologies |
21+ |
PG-TO252-3 |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
INFINEON/英飞凌 |
13+ |
TO-252 |
5000 |
原装现货 |
|||
INFINEON |
25+ |
TO-252 |
6000 |
原厂原装,价格优势 |
|||
INFINEON/英飞凌 |
2023+ |
TO-252 |
7500 |
原厂全新正品旗舰店优势现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
89630 |
当天发货全新原装现货 |
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DdatasheetPDF页码索引
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