型号 功能描述 生产厂家 企业 LOGO 操作
IPB65R600C6

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

Infineon

英飞凌

IPB65R600C6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

IPB65R600C6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

Infineon

英飞凌

IPB65R600C6产品属性

  • 类型

    描述

  • 型号

    IPB65R600C6

  • 功能描述

    MOSFET 650V CoolMOS C6 Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-18 12:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon(英飞凌)
2511
9550
电子元器件采购降本30%!原厂直采,砍掉中间差价
INFINEON/英飞凌
23+
D2PAK(TO
30000
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
INFINEON/英飞凌
23+
TO-263
11220
英飞凌优势原装IC,高效BOM配单。
ADI
23+
D2PAK(TO-263)
8000
只做原装现货
INFINEON/英飞凌
23+
D2PAK(TO-263)
50000
全新原装正品现货,支持订货
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
INFINEON/英飞凌
2023+
TO263
10000
一级代理优势现货,全新正品直营店
Infineon(英飞凌)
24+
TO-263
7793
支持大陆交货,美金交易。原装现货库存。

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