型号 功能描述 生产厂家 企业 LOGO 操作
IPB65R600C6

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

Infineon

英飞凌

IPB65R600C6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

IPB65R600C6

500V-900V CoolMOS™ N-Channel Power MOSFET

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device p

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

Infineon

英飞凌

IPB65R600C6产品属性

  • 类型

    描述

  • 型号

    IPB65R600C6

  • 功能描述

    MOSFET 650V CoolMOS C6 Power Transistor

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
18500
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON
20+
D2PAK(TO-263)
36900
原装优势主营型号-可开原型号增税票
INFINEON
1839+
TO-263
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon Technologies
21+
D2PAK(TO-263AB)
1000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
INFINEON/英飞凌
23+
D2PAK(TO
30000
原厂授权一级代理,专业海外优势订货,价格优势、品种
Infineon(英飞凌)
24+
TO-263
7793
支持大陆交货,美金交易。原装现货库存。
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
英飞翎
23+
D2PAK(TO-263)
6000
原装正品,支持实单
ADI
23+
D2PAK(TO-263)
8000
只做原装现货

IPB65R600C6数据表相关新闻