型号 功能描述 生产厂家 企业 LOGO 操作
IPB60R600P6

Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

Infineon

英飞凌

IPB60R600P6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

IPB60R600P6

Metal Oxide Semiconductor Field Effect Transistor

文件:2.40922 Mbytes Page:19 Pages

Infineon

英飞凌

IPB60R600P6

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:2.40922 Mbytes Page:19 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicatio

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件:2.85536 Mbytes Page:19 Pages

Infineon

英飞凌

更新时间:2025-12-15 16:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINE0N
21+
PG-TO263-3
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
INFINEON/英飞凌
23+
TO-263
11220
英飞凌优势原装IC,高效BOM配单。
Infineon Technologies
23+
原装
8000
只做原装现货
Infineon Technologies
23+
原装
7000

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