Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

英飞凌 CoolMOS ™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于设计。CoolMOS ™ P6 缩小了专注于提供终极性能的技术与更注重易用性的技术之间的差距。 • 降低栅极电荷 (Q g)\n• 提高 V th\n• 良好的体二极管耐用性\n• 优化的集成 R g\n• 从 50V/ns 开始改善 dv/dt\n• CoolMOS ™品质，拥有超过 12 年的超结技术制造经验;

Metal Oxide Semiconductor Field Effect Transistor

文件：2.40922 Mbytes Page：19 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：2.40922 Mbytes Page：19 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.