600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

 CoolMOS™ E6 结合了英飞凌作为业内领先的超结MOSFET供应商的相关经验与其先进的创新技术所提供的器件具备了快速开关 SJ MOSFET 的所有优点，同时又不牺牲易用性。很低的开关和通态损耗使开关应用更高效，结构紧凑、重量更轻、温度更低。\n  \n • 600V CoolMOS™ E6 可替代 600V CoolMOS™ C3\n• 650V CoolMOS™ E6 可替代 650V CoolMOS™ C3 • 易于控制开关行为\n• 非常高的换流坚固性\n• 由于非常低的优质系数(R DS(ON)*Q g) 和 E oss)，因此损耗极低\n• 使用简便\n• 与 C3 相比，具有更高的轻载效率\n• 出色的可靠性和经过实践验证的 CoolMOS™ 质量以及高密度二极管耐用性\n• 与以前的 CoolMOS™ 几代产品相比，性价比更高\n• 更高效、更紧凑、重量更轻、温度更低 \n \n\n优势:\n• 提升功率密度\n• 提升可靠性\n• 通用部件可在软、硬开关拓扑中使用\n• 提高轻载效率\n• 提高在硬开关应用中的效率\n• 改进了易用性\n• 减轻可能因为 PCB 布局和封装寄生效应而引;

Metal Oxide Semiconductor Field Effect Transistor

文件：1.21626 Mbytes Page：17 Pages

Material Content Data Sheet

文件：33.11 Kbytes Page：1 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.21626 Mbytes Page：17 Pages

Material Content Data Sheet

文件：33.11 Kbytes Page：1 Pages

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to

Metal Oxide Semiconductor Field Effect Transistor

文件：1.21626 Mbytes Page：17 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.21626 Mbytes Page：17 Pages