600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applica

Metal Oxide Semiconductor Field Effect Transistor

文件：1.21626 Mbytes Page：17 Pages

Material Content Data Sheet

文件：33.11 Kbytes Page：1 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.21626 Mbytes Page：17 Pages

Material Content Data Sheet

文件：33.11 Kbytes Page：1 Pages

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.45Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation