600V CoolMOS ™ CFD7 超结 MOSFET，采用 DPAK 封装，集成快速体二极管，是谐振高功率拓扑的完美选择

• Ultra-fast body diode\n• Best-in-class reverse recovery charge (Qrr)\n• Improved reverse diode dv/dt and dif/dt ruggedness\n• Lowest FOM RDS(on)x Qgand Eoss\n• Best-in-class RDS(on)/package combinations\n\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topolog;

丝印代码：60R360F7；600V CoolMOS짧 CFD7 Power Device

文件：1.01071 Mbytes Page：14 Pages

丝印代码：60R360F7；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

丝印代码：60R360F7；600V CoolMOS짧 CFD7 Power Device

文件：1.11122 Mbytes Page：14 Pages

丝印代码：60R360F7；600V CoolMOS짧 CFD7 Power Transistor

文件：1.23236 Mbytes Page：14 Pages