600V CoolMOSª PFD7 SJ Power Device

Features • Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss • Low switching losses Eoss, excellent thermal behavior • Fast body diode • Wide range portfolio of RDS(on) and package variations • Integrated zener diode

N-Channel MOSFET Transistor

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英飞凌对谐振高功率拓扑的回答

600V CoolMOS짧 CFD7 Power Transistor

文件：1.204 Mbytes Page：14 Pages

600V CoolMOS짧 P7 Power Transistor

文件：901.11 Kbytes Page：14 Pages

N-Channel MOSFET Transistor

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Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

N-Channel MOSFET Transistor

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600V CoolMOS짧 P7 Power Transistor

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采用 TO-252 DPAK 封装的 600V CoolMOS ™ PFD7 超结 MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 13.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

600V CoolMOS짧 CE Power Transistor

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600V 0.28ohm N-channel MOSFET

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600V N-Channel MOSFET

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600V N-Channel MOSFET

文件：1.82232 Mbytes Page：8 Pages