位置：首页 > IC中文资料第5081页 > IPF10N03LA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPF10N03LA | OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 |   | |
IPF10N03LA | OptiMOS2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | |
IPF10N03LA | MOSFET N-CH 25V 30A DPAK | Infineon 英飞凌 | | |
OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
OptiMOS Buck converter series 文件：452.29 Kbytes Page：8 Pages | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.7366 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.83276 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N -C hannel E nhancem ent M ode Field E ffect Transistor 文件：655.67 Kbytes Page：6 Pages | ADV 爱德微 | |
IPF10N03LA产品属性
- 类型
描述
- 型号
IPF10N03LA
- 功能描述
MOSFET N-CH 25V 30A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
OptiMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
JINGDAO/晶导微 |
23+ |
SOD-123 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
INFINEON |
23+ |
8000 |
专注配单,只做原装进口现货 |
||||
INFINEON |
24+ |
ReverseDPAK(Revers |
8866 |
||||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
VB |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
23+ |
7000 |
|||||
INFINEON/英飞凌 |
22+ |
TO-252 |
90442 |
IPF10N03LA芯片相关品牌
IPF10N03LA规格书下载地址
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