isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

Isc N-Channel MOSFET Transistor

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N 沟道功率 MOSFET

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

文件：483.4 Kbytes Page：11 Pages

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

文件：483.4 Kbytes Page：11 Pages

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 60 V，采用 D²PAK 封装

N-Channel PowerTrench짰 MOSFET 60V, 193A, 3.1mW

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switc

isc N-Channel MOSFET Transistor

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Isc N-Channel MOSFET Transistor

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Superior thermal resistance

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New OptiMOS??40V and 60V

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