isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

950V CoolMOS짧 P7 SJ Power Device

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500 V-950 V CoolMOS™ N 沟道功率 MOSFET

MOSFET 950V CoolMOSª P7 SJ Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Best-in-class CoolMOS™ quality and reliability • Fully optimized portfolio

950V CoolMOS짧 P7 SJ Power Device

文件：1.39032 Mbytes Page：14 Pages