1200V high speed switching series third generation

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Features: TRENCHSTOPTM technology offering • very low VCEsat • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC

Trench and Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.05V@IC=25A ·Very soft,fast recovery anti-parallel diode ·Low Switching Losses APPLICATIONS ·Uninterrupted Power Supply ·Air Conditioning ·welding converters

High speed IGBT in Trench and Fieldstop technology

High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: TRENCHSTOPTM technology offering • best in class switching performance: less than 500µJ total switching losses achievable • very low VCEsat • low EMI • maximum junction temperatur

IGW25N120H3

Features: TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpic