1200V high speed switching series third generation

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Features: TRENCHSTOPTM technology offering • very low VCEsat • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC

Trench and Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.05V@IC=25A ·Very soft,fast recovery anti-parallel diode ·Low Switching Losses APPLICATIONS ·Uninterrupted Power Supply ·Air Conditioning ·welding converters

封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 50A 326W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGW25N120H3

Features: TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpic

High speed IGBT in Trench and Fieldstop technology

High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: TRENCHSTOPTM technology offering • best in class switching performance: less than 500µJ total switching losses achievable • very low VCEsat • low EMI • maximum junction temperatur