IGW25N120H3价格

参考价格:¥17.3181

型号:IGW25N120H3 品牌:Infineon 备注:这里有IGW25N120H3多少钱,2025年最近7天走势,今日出价,今日竞价,IGW25N120H3批发/采购报价,IGW25N120H3行情走势销售排行榜,IGW25N120H3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IGW25N120H3

High speed IGBT in Trench and Fieldstop technology

High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 Features: TRENCHSTOPTM technology offering • best in class switching performance: less than 500µJ total switching losses achievable • very low VCEsat • low EMI • maximum junction temperatur

Infineon

英飞凌

IGW25N120H3

IGW25N120H3

Features: TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpic

Infineon

英飞凌

IGW25N120H3

Features: TRENCHSTOPTMtechnologyoffering •bestinclassswitchingperformance:lessthan500µJtotal switchinglossesachievable •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpic

Infineon

英飞凌

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IGBT 1200V 50A 326W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

Trench and Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.05V@IC=25A ·Very soft,fast recovery anti-parallel diode ·Low Switching Losses APPLICATIONS ·Uninterrupted Power Supply ·Air Conditioning ·welding converters

ISC

无锡固电

1200V high speed switching series third generation

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Features: TRENCHSTOPTM technology offering • very low VCEsat • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC

Infineon

英飞凌

IGW25N120H3产品属性

  • 类型

    描述

  • 型号

    IGW25N120H3

  • 功能描述

    IGBT 晶体管 IGBT PRODUCTS

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-9 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-247-3-1
928
原厂订货渠道,支持BOM配单一站式服务
INFINEON/英飞凌
24+
NA/
8675
原装现货,当天可交货,原型号开票
INFINEON
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
INFINEON
10+
TO-247
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
2450+
TO247
8850
只做原装正品假一赔十为客户做到零风险!!
INFINEON/英飞凌
22+
TO-247
15000
英飞凌MOS管、IGBT大量有货
Infineon/英飞凌
23+
PG-TO247-3
25630
原装正品
INFINEON
25+23+
TO-247
24477
绝对原装正品现货,全新深圳原装进口现货
Infineon/英飞凌
21+
PG-TO247-3
6820
只做原装,质量保证
INFINEON
24+
TO-247
8500
原厂原包原装公司现货,假一赔十,低价出售

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