Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode Features • VCE=1200 V • IC=15 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C • Optimized for hard

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Features: TRENCHSTOP™ technology offering • very low VCEsat • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Mod

High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode

文件：2.14502 Mbytes Page：16 Pages

1200 V、15 A IGBT，带反并联二极管，采用 TO-247 封装

封装/外壳：TO-247-3 包装：管件 描述：INDUSTRY 14 PG-TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT 分立器件

1200V high speed switching series third generation

文件：2.13291 Mbytes Page：16 Pages

1200V high speed switching series third generation

文件：2.13291 Mbytes Page：16 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT TRENCH/FS 1200V 30A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

1200 V、15 A IGBT 分立器件，带反并联二极管，采用 TO-247 封装

IGBT in 2nd generation TrenchStop짰 technology with soft, fast recovery anti-parallel Emitter Controlled Diode

文件：477.64 Kbytes Page：15 Pages

Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

文件：386.59 Kbytes Page：15 Pages

Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

文件：386.59 Kbytes Page：15 Pages

IGBT in 2nd generation TrenchStop짰 technology with soft, fast recovery anti-parallel Emitter Controlled Diode

文件：477.64 Kbytes Page：15 Pages

High ruggedness, temperature stable behavior

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness,

Soft current turn-off waveforms

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior

Soft current turn-off waveforms

General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·E

IGBT

General Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：1.36019 Mbytes Page：9 Pages