Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode Features • VCE=1200 V • IC=15 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C • Optimized for hard

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

1200 V、15 A IGBT7 S7，带反并联二极管，采用 TO-247 封装

封装/外壳：TO-247-3 包装：管件 描述：INDUSTRY 14 PG-TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单