TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz

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RC-Drive and RC-Drive Fast

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?쏳C-D Fast?? RC-Drives IGBT optimized for high switching frequency

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IGBT with integrated diode in packages offering space saving advantage

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：IGBT 600V 5A 53.6W TO252-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

分立式IGBT

IGBT with integrated diode in packages offering space saving advantage

文件：1.92227 Mbytes Page：16 Pages

TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz

文件：1.71473 Mbytes Page：16 Pages

Optimized Eon, Eoff and Qrr for low switching losses

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Optimized Eon, Eoff and Qrr for low switching losses

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

N-Channel 650 V (D-S) MOSFET

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IGBT with integrated diode in packages offering space saving advantage

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Power MOSFET

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N-CHANNEL SILICON POWER MOSFETFeatures

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