Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distributio

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distributio

IGBT

600 V、30 A IGBT 分立器件，采用 TO-247 封装

High speed IGBT IN Trench and Fieldstop technology

文件：1.5673 Mbytes Page：14 Pages

Low Loss IGBT in TrenchStop and Fieldstop technology

文件：446.85 Kbytes Page：13 Pages

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 600V 60A 187W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

采用 TO-247 封装的 600 V、30 A IGBT

TRENCHSTOPTM Performance technology

文件：1.46499 Mbytes Page：14 Pages

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT TRENCH/FS 600V 53A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

文件：1.9827 Mbytes Page：16 Pages

ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

N-Channel Enhancement Mode MOSFET

文件：281.61 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：264.01 Kbytes Page：4 Pages