位置：首页 > IC中文资料第8483页 > IGA30N60H3ZZ
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High speed switching series third generation 文件：1.62111 Mbytes Page：15 Pages | INFINEON 英飞凌 |   | ||
BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDNW30N60H3 IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic character | BOURNS 伯恩斯 | | ||
High speed switching series third generation TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant | INFINEON 英飞凌 | | ||
600V high speed switching series third generation 文件：1.63937 Mbytes Page：14 Pages | INFINEON 英飞凌 | | ||
600V high speed switching series third generation 文件：1.45972 Mbytes Page：14 Pages | INFINEON 英飞凌 | |
IGA30N60H3ZZ产品属性
- 类型
描述
- 型号
IGA30N60H3ZZ
- 制造商
Infineon Technologies AG
- 功能描述
IGBT PRODUCTS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
22+ |
TO-263 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEON |
1531+ |
SOT-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TI |
24+ |
QFP |
492 |
||||
Infineon Technologies |
22+ |
TO220331 |
9000 |
原厂渠道,现货配单 |
|||
INFINEON |
1531+ |
SOT-263 |
1005 |
||||
INFINEON/英飞凌 |
25+ |
TO-263 |
97 |
全新原装正品支持含税 |
|||
INFINEON |
23+ |
8000 |
只做原装现货 |
||||
INFINEON |
23+ |
7000 |
|||||
Infineon(英飞凌) |
2447 |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
IGA30N60H3ZZ芯片相关品牌
IGA30N60H3ZZ规格书下载地址
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IGA30N60H3ZZ数据表相关新闻
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联系人张生 电话19926428992 QQ1924037095
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深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
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DdatasheetPDF页码索引
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