BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDNW30N60H3 IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic character

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 30A TRENCH TO-247N-3L 分立半导体产品 晶体管 - UGBT、MOSFET - 单

High speed switching series third generation

TRENCHSTOP technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating, halogen-free mould compound, RoHS compliant

High speed switching series third generation

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600V high speed switching series third generation

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600V high speed switching series third generation

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