位置：首页 > IC中文资料 > IDT71V67603S150BQGI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IDT71V67603S150BQGI | 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 文件：986.08 Kbytes Page：23 Pages | IDT |   | |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L | RENESAS 瑞萨 | | ||
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
25+ |
QFP100 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IDT |
24+ |
TQFP |
101 |
||||
IDT |
22+ |
QFP |
2000 |
原装正品现货 |
|||
IDT |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IDT |
NEW |
100TQFP |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IDT |
23+ |
165-CABGA(13x15) |
4030 |
专业分销产品!原装正品!价格优势! |
|||
Renesas |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
IDT |
22+ |
165CABGA (13x15) |
9000 |
原厂渠道,现货配单 |
|||
IDT, Integrated Device Technol |
24+ |
100-TQFP(14x14) |
56200 |
一级代理/放心采购 |
|||
IDT |
24+ |
QFP |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
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IDT71V67603S150BQGI规格书下载地址
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DdatasheetPDF页码索引
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