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位置：首页 > IC中文资料 > 71V67603S150BQ

型号 功能描述 生产厂家 企业 LOGO 操作
71V67603S150BQ

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQ

封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器

ETC

知名厂家

71V67603S150BQ8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQG8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQI8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQG

封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器

ETC

知名厂家

71V67603S150BG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BGG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BGGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQ供应商更多...

更新时间：2025-11-22 10:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市芯为科技有限公司
71V67603S150BQ
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
深圳市中联芯电子有限公司
71V67603S150BQ
IDT
24+
BGAQFP
9000
只做原装正品 有挂有货 假一赔十
询价
深圳市澳亿芯电子科技有限公司
71V67603S150BQ
IDT
23+
BGA
98900
原厂原装正品现货!!
询价
现代芯城（深圳）科技有限公司
71V67603S150BQ8
24+
N/A
79000
一级代理-主营优势-实惠价格-不悔选择
询价
瀚佳科技(深圳)有限公司
71V67603S150BQ
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一级代理/放心采购
询价
深圳市莱克讯科技有限公司
71V67603S150BQ
IDT
BGAQFP
1680
只做进口原装!假一罚十!绝对有货!
询价
深圳市科芯源微电子有限公司
71V67603S150BQ
IDT
25+
BGA
996880
只做原装,欢迎来电资询
询价
贸泽芯城（深圳）电子科技有限公司
71V67603S150BQ
IDT
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
深圳市冠亿通科技有限公司
71V67603S150BQ
Renesas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市宇创芯科技有限公司
71V67603S150BQG8
RENESAS(瑞萨)/IDT
24+
CABGA-165(13x15)
16508
原装正品现货支持实单
询价

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