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位置：首页 > IC中文资料 > 71V67603S150BQ

型号 功能描述 生产厂家 企业 LOGO 操作
71V67603S150BQ

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQ

封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器

ETC

知名厂家

71V67603S150BQ8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQG8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQI8

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQG

封装/外壳：165-TBGA 包装：托盘 描述：IC SRAM 9MBIT PARALLEL 165CABGA 集成电路（IC） 存储器

ETC

知名厂家

71V67603S150BG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BGG

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BGGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BQ供应商更多...

更新时间：2026-3-7 13:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市斌腾达科技有限公司
71V67603S150BQI
IDT, Integrated Device Technol
21+
-
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
深圳市福田区亿兴成电子商行
71V67603S150BQ
IDT
BGAQFP
6688
15
现货库存
询价
深圳市中联芯电子有限公司
71V67603S150BQ
IDT
24+
BGAQFP
9000
只做原装正品 有挂有货 假一赔十
询价
贸泽芯城（深圳）电子科技有限公司
71V67603S150BQ
IDT
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
现代芯城（深圳）科技有限公司
71V67603S150BQI8
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市冠亿通科技有限公司
71V67603S150BQI8
Renesas Electronics Corporatio
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
询价
艾睿（深圳）半导体有限公司
71V67603S150BQ
RENESAS(瑞萨)/IDT
2447
CABGA-165(13x15)
315000
136个/托盘一级代理专营品牌!原装正品,优势现货,长
询价
深圳市莱克讯科技有限公司
71V67603S150BQ
IDT
BGAQFP
1680
只做进口原装!假一罚十!绝对有货!
询价
深圳市芯为科技有限公司
71V67603S150BQI
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
深圳市澳亿芯电子科技有限公司
71V67603S150BQ
IDT
25+
BGA
98900
原厂原装正品现货!!
询价

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