型号 功能描述 生产厂家 企业 LOGO 操作
71V67603S150BGI

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

71V67603S150BGI

封装/外壳:119-BGA 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

ETC

知名厂家

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

封装/外壳:119-BGA 包装:卷带(TR) 描述:IC SRAM 9MBIT PARALLEL 119PBGA 集成电路(IC) 存储器

ETC

知名厂家

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

Features ◆ 256K x 36, 512K x 18 memory configurations ◆ Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ L

RENESAS

瑞萨

更新时间:2026-3-6 10:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas
25+
电联咨询
7800
公司现货,提供拆样技术支持
IDT
24+
BGAQFP
9000
只做原装正品 有挂有货 假一赔十
IDT
原厂封装
9800
原装进口公司现货假一赔百
RENESAS(瑞萨)/IDT
2021+
PBGA-119(14x22)
499
IDT
23+
BGA
98900
原厂原装正品现货!!
IDT
25+
BGAQFP
246
普通
24+
N/A
63000
一级代理-主营优势-实惠价格-不悔选择
IDT, Integrated Device Technol
24+
119-PBGA(14x22)
56200
一级代理/放心采购
IDT
1922+
BGAQFP
1680
只做进口原装!假一罚十!绝对有货!
Renesas Electronics America In
25+
119-BGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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