HY628100B资料使用说明书供应代理商海力士-IC资料网

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型号	功能描述	生产厂家企业	LOGO
HY628100B	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100B	128K x 8bit CMOS SRAM	Hynix 海力士	Hynix
HY628100B-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100B-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100B-E	128K x8 bit 5.0V Low Power CMOS slow SRAM	Hynix 海力士	Hynix
HY628100BLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM	Hynix 海力士	Hynix
HY628100A	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HY628100AG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HY628100ALG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HY628100ALLG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HM628100I	Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) 文件：91.14 Kbytes Page：17 Pages	RENESAS 瑞萨	RENESAS

HY628100B产品属性

类型
描述
型号
HY628100B
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
128K x8 bit 5.0V Low Power CMOS slow SRAM

HY628100B供应商更多...

更新时间：2025-10-4 17:02:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	HY628100BLLG-70I	HYNIX/海力士	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市振宏微科技有限公司	HY628100BLLT1-70I,BD8963EFJ,AMC7628-3	TSSOP	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华斯顿科技有限公司	HY628100BLG-70	HYNIX	25+23+	SOP32	24153	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	HY628100BLT1-70	HYNIX	22+	TSSOP	8000	原装正品支持实单	询价
深圳市恒达亿科技有限公司	HY628100BLLG-70	HYNIX	25+	SOP32	3500	全新原装价格优势!量大可订货!	询价
深圳市坤融电子科技有限公司	HY628100BLLG-70	HYUNDAI	24+	SOP	275	只做原厂渠道可追溯货源	询价
深圳市毅创腾电子科技有限公司	HY628100B	HYUNDAI	23+	SOP	7512	绝对全新原装!现货!特价!请放心订购!	询价
深圳市冠亿通科技有限公司	HY628100BLLG-70	HY	25+	SOP	25000	进口原装,深圳现货,可出样	询价
深圳市一线半导体有限公司	HY628100BLT1-55I	HYNIX	24+	32TSOP	10500		询价
深圳市赛特兴科技有限公司	HY628100BLLG-70	HUAYI/华羿微	QQ咨询	CFOP	4823	全新原装研究所指定供货商	询价

HY628100B芯片相关品牌

HY628100B规格书下载地址

HY628100B参数引脚图相关

HY628100B数据表相关新闻

HY628400LG-70
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HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55
2020-1-13
HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
2019-12-12
HY681690
HY681690，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引

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HY628100B产品属性

HY628100B供应商更多...

HY628100B芯片相关品牌

HY628100B规格书下载地址

HY628100B参数引脚图相关

HY628100B数据表相关新闻

HY628400LG-70

HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55

HY604808

HY681690

HY57V641620ETP-6公司原装正品现货/随时可以发货

HYG260P03LR1S

DdatasheetPDF页码索引