HY628100B资料使用说明书供应代理商海力士-IC资料网

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型号	功能描述	生产厂家企业	LOGO
HY628100B	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100B	128K x 8bit CMOS SRAM	Hynix 海力士	Hynix
HY628100B-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100B-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLG	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLG-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLG-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLT1	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLT1-E	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100BLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high	Hynix 海力士	Hynix
HY628100B-E	128K x8 bit 5.0V Low Power CMOS slow SRAM	Hynix 海力士	Hynix
HY628100BLT1-I	128K x8 bit 5.0V Low Power CMOS slow SRAM	Hynix 海力士	Hynix
HY628100A	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HY628100AG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HY628100ALG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HY628100ALLG	128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used	Hynix 海力士	Hynix
HM628100I	Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) 文件：91.14 Kbytes Page：17 Pages	RENESAS 瑞萨	RENESAS

HY628100B产品属性

类型
描述
型号
HY628100B
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
128K x8 bit 5.0V Low Power CMOS slow SRAM

HY628100B供应商更多...

更新时间：2025-11-23 13:40:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市正纳电子有限公司	HY628100B	SAMSUNG	ROHS+Original	NA	1014	专业电子元器件供应链/QQ 350053121 /正纳电子	询价
深圳市华斯顿科技有限公司	HY628100BLG-70	HYNIX	25+23+	SOP32	24153	绝对原装正品全新进口深圳现货	询价
深圳市粤骏腾电子科技有限公司	HY628100BLLT1-70	HYNIX	24+	TSOP-32	5000	十年沉淀唯有原装	询价
深圳市向鸿伟业电子有限公司	HY628100BLT1-70	HYNIX	25+	TSOP	438	原装现货只做自己现货	询价
深圳市中联芯电子有限公司	HY628100BLLT1-70	HYNIX	24+	TSOP-32	9000	只做原装正品有挂有货假一赔十	询价
深圳市斌能达电子科技有限公司	HY628100BLLT1-70	HYUNDAI	24+	TSOP	2000	全新原装深圳仓库现货有单必成	询价
贸泽芯城（深圳）电子科技有限公司	HY628100BLTI-70	HY	23+	SSOP	3966	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市纳立科技有限公司	HY628100BLLT1-55DR	SKHYNIX	三年内		1983	只做原装正品	询价
深圳市坤融电子科技有限公司	HY628100BLLT	SKHYNIX/海力士	2025+	TSOP	4950	原装进口价格优请找坤融电子!	询价
深圳市勤思达科技有限公司	HY628100BLLG-70	HYNIX	15+	SSOP	11560	全新原装,现货库存,长期供应	询价

HY628100B芯片相关品牌

HY628100B规格书下载地址

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HY628100B数据表相关新闻

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HY604808
HY604808，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引

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HY628100B产品属性

HY628100B供应商更多...

HY628100B芯片相关品牌

HY628100B规格书下载地址

HY628100B参数引脚图相关

HY628100B数据表相关新闻

HY628400LG-70

HY628100A，HY628100ALG-70，HY628100B，HY628100BLLG55

HY604808

HY681690

HY57V641620ETP-6公司原装正品现货/随时可以发货

HYG260P03LR1S

DdatasheetPDF页码索引