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位置：首页 > IC中文资料第5669页 > HY628100BLLG

型号 功能描述 生产厂家 企业 LOGO 操作
HY628100BLLG

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

HYNIX

海力士

HY628100BLLG-E

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

HYNIX

海力士

HY628100BLLG-I

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

HYNIX

海力士

HY628100A

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

HYNIX

海力士

HY628100AG

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

HYNIX

海力士

HY628100ALG

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

HYNIX

海力士

HY628100B-E

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

HYNIX

海力士

HY628100BLLG产品属性

  • 类型

    描述

  • 型号

    HY628100BLLG

  • 功能描述

    IC-SMD-SRAM 1MB

HY628100BLLG供应商更多...

更新时间：2026-3-17 9:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
贸泽芯城（深圳）电子科技有限公司
HY628100BLLG55
HY
23+
SOP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市创新迹电子有限公司
HY628100-BLLG-55
HYNIX
22+
SOP32
20000
公司只做原装 品质保障
询价
深圳市益百分电子有限公司
HY628100BLLG-55
HYNIX
04+
SOP32
84
全新原装进口自己库存优势
询价
上海专毅电子科技有限公司
HY628100BLLG-55
HYNIX
17+
SOP-32
9888
全新原装现货QQ:547425301手机17621633780杨小姐
询价
深圳市赛美科科技有限公司
HY628100BLLG-55
HYNIX
SOP32
125000
一级代理原装正品,价格优势,长期供应!
询价
深圳市坤融电子科技有限公司
HY628100BLLG-70/HY62V8100BLLG-70
HY
2025+
SOP32
4950
原装进口价格优 请找坤融电子!
询价
深圳市冠亿通科技有限公司
HY628100BLLG-70
HY
25+
SOP
25000
进口原装,深圳现货,可出样
询价
深圳市壹芯创科技有限公司
HY628100BLLG-55
HYNIX
22+
SMD
5000
全新原装现货!自家库存!
询价
深圳市赛尔通科技有限公司
HY628100BLLG-55
HYNIX
23+
SOP
65480
询价
芯有半导体（深圳）有限公司
HY628100BLLG-70
HY
00+
SOP
3200
全新原装绝对自己公司现货
询价

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