型号 功能描述 生产厂家 企业 LOGO 操作
HY628100BLLG

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

Hynix

海力士

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

Hynix

海力士

128K x8 bit 5.0V Low Power CMOS slow SRAM

DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

Hynix

海力士

128Kx8bit CMOS SRAM

DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used

Hynix

海力士

Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit)

文件:91.14 Kbytes Page:17 Pages

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瑞萨

HY628100BLLG产品属性

  • 类型

    描述

  • 型号

    HY628100BLLG

  • 功能描述

    IC-SMD-SRAM 1MB

更新时间:2025-12-31 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HY
20+
SOP
2860
原厂原装正品价格优惠公司现货欢迎查询
HYNIX
25+
SOP-32
10
原装现货只做自己现货
HYNIX
22+
SMD
5000
全新原装现货!自家库存!
HYNIX
22+
SOP-32
8000
原装正品支持实单
HY
21+
SOP32
10000
原装现货假一罚十
HY
1902+
SOP32
2734
代理品牌
HY/SOP
23+
39290
##公司主营品牌长期供应100%原装现货可含税提供技术
HY
1922+
SMD
8200
莱克讯原厂货源每一片都来自原厂原装现货薄利多
HY
24+
NA/
22
优势代理渠道,原装正品,可全系列订货开增值税票
HYNIX
03+
SOP
358
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