位置:首页 > IC中文资料第5669页 > HY628100BLLG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY628100BLLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high | Hynix 海力士 | ||
128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high | Hynix 海力士 | |||
128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION The HY628100B is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high | Hynix 海力士 | |||
128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used | Hynix 海力士 | |||
128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used | Hynix 海力士 | |||
128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used | Hynix 海力士 | |||
128Kx8bit CMOS SRAM DESCRIPTION The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used | Hynix 海力士 | |||
Wide Temperature Range Version 8 M SRAM (1024-kword x 8-bit) 文件:91.14 Kbytes Page:17 Pages | RENESAS 瑞萨 |
HY628100BLLG产品属性
- 类型
描述
- 型号
HY628100BLLG
- 功能描述
IC-SMD-SRAM 1MB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
03+ |
SOP |
358 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HY |
24+ |
NA/ |
22 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SKHYNIX/海力士 |
25+ |
SOP-32 |
32360 |
SKHYNIX/海力士全新特价HY628100BLLG-70即刻询购立享优惠#长期有货 |
|||
HY |
1127+ |
SOP32 |
15807 |
只做原厂原装,认准宝芯创配单专家 |
|||
HYNIX |
25+ |
SOP32 |
3500 |
全新原装价格优势!量大可订货! |
|||
HY |
24+ |
SOP |
2000 |
全新原装深圳仓库现货有单必成 |
|||
HYNIX |
04+ |
SOP32 |
84 |
全新原装进口自己库存优势 |
|||
HYNIX |
22+ |
SOP32 |
20000 |
公司只做原装 品质保障 |
|||
HYNIX |
23+ |
SOP |
65480 |
||||
HYNIX |
22+ |
SOP-32 |
8000 |
原装正品支持实单 |
HY628100BLLG芯片相关品牌
HY628100BLLG规格书下载地址
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HY628100BLLG数据表相关新闻
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