位置：首页 > IC中文资料第5611页 > HY57V121620
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V121620 | 4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 |  |   |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | | |
4Banksx8Mx16BitSynchronousDRAM DESCRIPTION TheHY57V121620isa512-MbitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V121620isorganizedas4banksof8,388,608x16. HY57V121620isofferingfullysynchronousoperationreferencedtoapositive | HynixHynix Semiconductor SK海力士海力士半导体 | | |
HY57V121620产品属性
- 类型
描述
- 型号
HY57V121620
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 8M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
22+ |
360000 |
进口原装自己库存实库实数 |
||||
HYNIX |
19+ |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
||||
HYNIX |
2020+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
- |
23+ |
TSOP54 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
HYNIX |
11+10+ |
TSOP |
103 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
23+ |
TSOP |
6620 |
绝对现货库存 |
|||
HY |
09+ |
SSOP |
8 |
||||
HYNIX |
10+ |
TSOP54 |
106 |
全新原装,支持实单,假一罚十,德创芯微 |
|||
HYNIX |
19718+ |
9750 |
进品原装正品 现货库存带17%增值发票 |
||||
2023+ |
SOP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
HY57V121620芯片相关品牌
HY57V121620规格书下载地址
HY57V121620参数引脚图相关
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HY57V121620数据表相关新闻
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2019-2-25
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