位置：首页 > IC中文资料第5611页 > HY57V121620LT
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V121620LT | 4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 |   | |
4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 | | ||
4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 | | ||
4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 | | ||
4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 | | ||
4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 | | ||
4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 | | ||
4 Banks x 8M x 16Bit Synchronous DRAM DESCRIPTION The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive | Hynix 海力士 | |
HY57V121620LT产品属性
- 类型
描述
- 型号
HY57V121620LT
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 8M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
25+ |
TSOP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
HYNIX |
24+ |
TSOP54 |
30 |
||||
HUAYI/华羿微 |
2450+ |
SSOP |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HYNIX |
24+ |
TSOP |
12000 |
原装正品 有挂就有货 |
|||
TSOP |
23+ |
16 |
3500 |
||||
HYNIX |
2025+ |
TSSOP |
3625 |
全新原厂原装产品、公司现货销售 |
|||
HYNIX |
11+10+ |
TSOP |
103 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HY |
09+ |
SSOP |
8 |
||||
HYNIX |
24+ |
TSOP |
990000 |
明嘉莱只做原装正品现货 |
|||
HYNIX/海力士 |
24+ |
TSOP-54 |
68600 |
原装现货 |
HY57V121620LT规格书下载地址
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