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型号	功能描述	生产厂家企业	LOGO
HY27UF081G2M	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M	USB 2.0 high-speed Flash drive controller 文件：614.48 Kbytes Page：32 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
HY27UF081G2M-F	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-T	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TCB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TCP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TCS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TEB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TEP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TES	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TIB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TIP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TIS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TMB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TMP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TMS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPCB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPCP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPCS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPEB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPEP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPES	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPIB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPIP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPIS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPMB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPMP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-TPMS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-V	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VCB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VCP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VCS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VEB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VEP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VES	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VIB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VIP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VIS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VMB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VMP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VMS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPCB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPCP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPCS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPEB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPEP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPES	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPIB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPIP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPIS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPMB	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPMP	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2M-VPMS	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided	Hynix 海力士	Hynix
HY27UF081G2A	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY DESCRIPTION The Hynix HY27UF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state massstorage market. The memory is divided into blocks that can be er	Hynix 海力士	Hynix

HY27UF081G2M产品属性

类型
描述
型号
HY27UF081G2M
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory

HY27UF081G2M供应商更多...

更新时间：2025-11-19 16:46:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市昊创电子有限公司	HY27UF081G2M	HYUNDAI	1824+	TSOP48	2713	原装现货专业代理,可以代拷程序	询价
瀚佳科技(深圳)有限公司	HY27UF081G2M	HYNIX	24+	TSSOP48	65200	一级代理/放心采购	询价
深圳诚思涵科技有限公司	HY27UF081G2M-TPCB	HYNIX	16+	QFP	4000	进口原装现货/价格优势!	询价
深圳市一线半导体有限公司	HY27UF081G2M	HYNIX	24+	TSOP	400		询价
深圳市科恒伟业电子有限公司	HY27UF081G2M-TPCB	HYNIX	2430+	TSOP	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市富芯乐电子科技有限公司	HY27UF081G2M-TCB	HYHIX	24+	TSOP-48	2000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市东来宝电子科技有限公司	HY27UF081G2M-TCB	HYNIX	24+	TSOP	26970	郑重承诺只做原装进口现货	询价
深圳市华来深电子有限公司	HY27UF081G2M-TCB	HYNIX	23+	TSSOP	8650	受权代理!全新原装现货特价热卖!	询价
深圳市明嘉莱科技有限公司	HY27UF081G2M-TCB	HYNIX	25+	TSOP48	860000	明嘉莱只做原装正品现货	询价
深圳市创盛芯科技有限公司	HY27UF081G2M	HYNIX	25+	TSOP	276	主营内存芯片全新原装正品	询价

HY27UF081G2M芯片相关品牌

HY27UF081G2M规格书下载地址

HY27UF081G2M参数引脚图相关

HY27UF081G2M数据表相关新闻

HY2213-BB3A
HY2213-BB3A，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13
HY2120-PB
HY2120-PB，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13
HY2113-KB5B
HY2113-KB5B，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13
HY27US08121B-FPCB
https://hch01.114ic.com/
2020-11-13
HY3008B
HY3008B，全新原装当天发货或门市自取0755-82732291.
2019-12-1
HY27US08561A-TPCB
HY27US08561A-TPCB
2019-11-27

DdatasheetPDF页码索引

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HY27UF081G2M芯片相关品牌

HY27UF081G2M规格书下载地址

HY27UF081G2M参数引脚图相关

HY27UF081G2M数据表相关新闻

HY2213-BB3A

HY2120-PB

HY2113-KB5B

HY27US08121B-FPCB

HY3008B

HY27US08561A-TPCB

DdatasheetPDF页码索引