位置：首页 > IC中文资料第5695页 > HY27UF081G2M-T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY27UF081G2M-T | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 |   | |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY DESCRIPTION The Hynix HY27UF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state massstorage market. The memory is divided into blocks that can be er | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
USB 2.0 high-speed Flash drive controller 文件：614.48 Kbytes Page：32 Pages | STMICROELECTRONICS 意法半导体 | |
HY27UF081G2M-T产品属性
- 类型
描述
- 型号
HY27UF081G2M-T
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX/海力士 |
25+ |
TSOP48 |
996880 |
只做原装,欢迎来电资询 |
|||
HYNIX/海力士 |
1824+ |
TSOP |
4200 |
原装现货专业代理,可以代拷程序 |
|||
HYINX |
22+ |
TSOP48 |
9565 |
||||
HY |
2023+ |
3000 |
进口原装现货 |
||||
HYNIX/海力士 |
23+ |
TSOP48 |
30000 |
原装现货,假一赔十. |
|||
HYNIX/海力士 |
23+ |
TSOP66 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HYHIX |
23+ |
TSOP48 |
12000 |
全新原装假一赔十 |
|||
HYNIX |
24+ |
TSOP48 |
250 |
只做原厂渠道 可追溯货源 |
|||
HYNIX |
1922+ |
TSOP48 |
2000 |
公司原装现货特价处理 |
|||
HYNIX |
25+ |
TSOP |
880000 |
明嘉莱只做原装正品现货 |
HY27UF081G2M-T芯片相关品牌
HY27UF081G2M-T规格书下载地址
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HY27UF081G2M-T数据表相关新闻
HY2213-BB3A
HY2213-BB3A，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13HY2120-PB
HY2120-PB，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13HY2113-KB5B
HY2113-KB5B，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13HY27US08121B-FPCB
https://hch01.114ic.com/
2020-11-13HY3008B
HY3008B，全新原装当天发货或门市自取0755-82732291.
2019-12-1HY27US08561A-TPCB
HY27US08561A-TPCB
2019-11-27
DdatasheetPDF页码索引
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