位置：首页 > IC中文资料第5695页 > HY27UF081G2M-T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY27UF081G2M-T | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 |   | |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY DESCRIPTION The Hynix HY27UF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state massstorage market. The memory is divided into blocks that can be er | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | | ||
USB 2.0 high-speed Flash drive controller 文件：614.48 Kbytes Page：32 Pages | STMICROELECTRONICS 意法半导体 | |
HY27UF081G2M-T产品属性
- 类型
描述
- 型号
HY27UF081G2M-T
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX/海力士 |
1824+ |
TSOP |
4200 |
原装现货专业代理,可以代拷程序 |
|||
HYNIX/海力士 |
25+ |
TSOP48 |
30000 |
原装现货,假一赔十. |
|||
HYNIX |
16+ |
QFP |
4000 |
进口原装现货/价格优势! |
|||
HYNIX |
24+ |
SLC |
26 |
||||
HYNIX |
2430+ |
TSOP |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HYHIX |
24+ |
TSOP-48 |
2000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HYNIX |
25+ |
TSOP48 |
79 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HYNIX |
24+ |
TSOP |
26970 |
郑重承诺只做原装进口现货 |
|||
hynix |
23+ |
TSOP48 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
HYNIX |
24+ |
TSOP48 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
HY27UF081G2M-T芯片相关品牌
HY27UF081G2M-T规格书下载地址
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HY27UF081G2M-T数据表相关新闻
HY2213-BB3A
HY2213-BB3A，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13HY2120-PB
HY2120-PB，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13HY2113-KB5B
HY2113-KB5B，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-3-13HY27US08121B-FPCB
https://hch01.114ic.com/
2020-11-13HY3008B
HY3008B，全新原装当天发货或门市自取0755-82732291.
2019-12-1HY27US08561A-TPCB
HY27US08561A-TPCB
2019-11-27
DdatasheetPDF页码索引
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