位置:首页 > IC中文资料第6882页 > HY27UF081G2M-V
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
HY27UF081G2M-V | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | ||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY DESCRIPTION The Hynix HY27UF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state massstorage market. The memory is divided into blocks that can be er | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory SUMMARY DESCRIPTION The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided | Hynix 海力士 | |||
USB 2.0 high-speed Flash drive controller 文件:614.48 Kbytes Page:32 Pages | STMICROELECTRONICS 意法半导体 |
HY27UF081G2M-V产品属性
- 类型
描述
- 型号
HY27UF081G2M-V
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HYNIX |
829+ |
TSOP48 |
196 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HUNIX |
2016+ |
TSOP |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SKHYNIX |
24+ |
TSOP48 |
3800 |
原装现货 |
|||
SKhynix |
24+ |
TSOP48 |
90000 |
专营海力士内存全线品牌假一赔万原装进口货可开增值税 |
|||
Skhynix |
1844+ |
TSOP |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HY |
25+ |
SSOP |
996880 |
只做原装,欢迎来电资询 |
|||
HYNIX |
24+ |
SMD |
90000 |
一级代理商进口原装现货、价格合理 |
|||
HY |
24+ |
SSOP |
12000 |
原装正品 有挂就有货 |
|||
HYNIX |
20+ |
TSOP48 |
6600 |
原装现货,特价出售。 |
|||
HYNIX |
6000 |
面议 |
19 |
TSOP48 |
HY27UF081G2M-V芯片相关品牌
HY27UF081G2M-V规格书下载地址
HY27UF081G2M-V参数引脚图相关
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- HY27UF081G2M-TMS
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HY27UF081G2M-V数据表相关新闻
HY2213-BB3A
HY2213-BB3A,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-13HY2120-PB
HY2120-PB,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-13HY2113-KB5B
HY2113-KB5B,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-3-13HY27US08121B-FPCB
https://hch01.114ic.com/
2020-11-13HY3008B
HY3008B,全新原装当天发货或门市自取0755-82732291.
2019-12-1HY27US08561A-TPCB
HY27US08561A-TPCB
2019-11-27
DdatasheetPDF页码索引
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