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HN1B晶体管资料
HN1B01F别名：HN1B01F三极管、HN1B01F晶体管、HN1B01F晶体三极管
HN1B01F生产厂家：
HN1B01F制作材料：Si-N/P
HN1B01F性质：表面帖装型 （SMD）
HN1B01F封装形式：贴片封装
HN1B01F极限工作电压：50V
HN1B01F最大电流允许值：0.15A
HN1B01F最大工作频率：120MHZ
HN1B01F引脚数：6
HN1B01F最大耗散功率：
HN1B01F放大倍数：
HN1B01F图片代号：H-23
HN1B01Fvtest：50
HN1B01Fhtest：120000000
- HN1B01Fatest：.15
HN1B01Fwtest：0
HN1B01F代换 HN1B01F用什么型号代替：
HN1B价格
参考价格：￥0.2037
型号：HN1B01FDW1T1G 品牌：ON 备注：这里有HN1B多少钱，2024年最近7天走势，今日出价，今日竞价，HN1B批发/采购报价，HN1B行情走势销售排行榜，HN1B报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Audio-Frequency General-Purpose Amplifier Applications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   | |
Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Dual General Purpose Amplifier Transistor ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating ♦HumanBodyModel:3A ♦MachineModel:C •SPrefixforAutomo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio-Frequency General-Purpose Amplifier Applications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio-Frequency General-Purpose Amplifier Applications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications 文件：364.15 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications 文件：364.15 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications 文件：362.98 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications 文件：362.98 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications 文件：514.65 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application 文件：304.52 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio Frequency General Purpose Amplifier Applications 文件：304.52 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications 文件：514.65 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio Frequency General Purpose Amplifier Applications 文件：324.31 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) 文件：270.27 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications 文件：386.14 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application 文件：304.52 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio Frequency General Purpose Amplifier Applications 文件：304.52 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
General-Purpose Amplifier Applications 文件：164.38 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
HN1B产品属性
- 类型
描述
- 型号
HN1B
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2310+ |
SOT-363 |
6598 |
优势代理渠道,原装现货,可全系列订货 |
|||
TOSHIBA |
2022 |
SOT363 |
1420 |
原厂原装正品,价格超越代理 |
|||
ON |
2339+ |
SC74 |
32280 |
原装现货 假一罚十！十年信誉只做原装！ |
|||
TOSHIBA-东芝 |
24+25+/26+27+ |
车规-元器件 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ONN |
2345+ |
原厂封装 |
61713 |
只做原装优势现货库存 渠道可追溯 |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
Toshiba |
22+ |
N/A |
21000 |
公司只有原装正品 |
|||
ON |
20+ |
SC74 |
11520 |
特价全新原装公司现货 |
|||
TOSHIBA |
23+ |
SOT163 |
20000 |
原厂原装正品现货 |
|||
进口品牌 |
21+ROHS |
SMD |
34433 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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DdatasheetPDF页码索引
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