HN1B晶体管资料

  • HN1B01F别名:HN1B01F三极管、HN1B01F晶体管、HN1B01F晶体三极管

  • HN1B01F生产厂家

  • HN1B01F制作材料:Si-N/P

  • HN1B01F性质:表面帖装型 (SMD)

  • HN1B01F封装形式:贴片封装

  • HN1B01F极限工作电压:50V

  • HN1B01F最大电流允许值:0.15A

  • HN1B01F最大工作频率:120MHZ

  • HN1B01F引脚数:6

  • HN1B01F最大耗散功率

  • HN1B01F放大倍数

  • HN1B01F图片代号:H-23

  • HN1B01Fvtest:50

  • HN1B01Fhtest:120000000

  • HN1B01Fatest:0.15

  • HN1B01Fwtest:0

  • HN1B01F代换 HN1B01F用什么型号代替

HN1B价格

参考价格:¥0.2037

型号:HN1B01FDW1T1G 品牌:ON 备注:这里有HN1B多少钱,2025年最近7天走势,今日出价,今日竞价,HN1B批发/采购报价,HN1B行情走势销售排行榜,HN1B报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Audio-Frequency General-Purpose Amplifier Applications

Audio-Frequency General-PurposeAmplifier Applications Q1: High voltage and high current : VCEO= −50 V, IC = −150 mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1 mA) / hFE(IC= −2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCE

TOSHIBA

东芝

Audio-Frequency General-Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO=

TOSHIBA

东芝

Audio-Frequency General-Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO=

TOSHIBA

东芝

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio-Frequency General-PurposeAmplifier Applications Q1: High voltage and high current : VCEO= −50 V, IC = −150 mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1 mA) / hFE(IC= −2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCE

TOSHIBA

东芝

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200~400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A − Machine Model: C • Pb−F

ONSEMI

安森美半导体

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200~400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A − Machine Model: C • Pb−F

ONSEMI

安森美半导体

Complementary Dual General Purpose Amplifier Transistor

Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200~400 • Moisture Sensitivity Level: 1 • ESD Rating ♦ Human Body Model: 3A ♦ Machine Model: C • S Prefix for Automo

ONSEMI

安森美半导体

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO=

TOSHIBA

东芝

Audio-Frequency General-Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO=

TOSHIBA

东芝

Audio-Frequency General-Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO=

TOSHIBA

东芝

Audio-Frequency General-Purpose Amplifier Applications

Audio-Frequency General-PurposeAmplifier Applications Q1: High voltage and high current : VCEO= −50 V, IC = −150 mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1 mA) / hFE(IC= −2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCE

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications

文件:364.15 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications

文件:364.15 Kbytes Page:6 Pages

TOSHIBA

东芝

NPN PNP 双极晶体管

ONSEMI

安森美半导体

Transistor for low frequency small-signal amplification 2 in 1

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

文件:362.98 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

文件:362.98 Kbytes Page:6 Pages

TOSHIBA

东芝

Transistor for low frequency small-signal amplification 2 in 1

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

文件:514.65 Kbytes Page:6 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application

文件:304.52 Kbytes Page:6 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

文件:304.52 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

文件:514.65 Kbytes Page:6 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

文件:324.31 Kbytes Page:6 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

文件:270.27 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

文件:386.14 Kbytes Page:6 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application

文件:304.52 Kbytes Page:6 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

文件:304.52 Kbytes Page:6 Pages

TOSHIBA

东芝

General-Purpose Amplifier Applications

文件:164.38 Kbytes Page:6 Pages

TOSHIBA

东芝

HN1B产品属性

  • 类型

    描述

  • 型号

    HN1B

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
SC-74
3022
原厂订货渠道,支持BOM配单一站式服务
VISHAY
23+
SOP-8
12000
全新原装假一赔十
ON
0132+
SC-74
457
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA/东芝
25+
SOT363
32000
TOSHIBA/东芝全新特价HN1B01FU-Y即刻询购立享优惠#长期有货
TOSHIBA/东芝
23+
SOT-163
50000
原装正品 支持实单
SOT23-6
24+
TOSHIBA
7850
只做原装正品现货或订货假一赔十!
ON
23+
SOT163
3000
正规渠道,只有原装!
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
ON(安森美)
24+
SC-74
21048
原厂可订货,技术支持,直接渠道。可签保供合同

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