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HN1B01F晶体管资料
HN1B01F别名：HN1B01F三极管、HN1B01F晶体管、HN1B01F晶体三极管
HN1B01F生产厂家：
HN1B01F制作材料：Si-N/P
HN1B01F性质：表面帖装型 （SMD）
HN1B01F封装形式：贴片封装
HN1B01F极限工作电压：50V
HN1B01F最大电流允许值：0.15A
HN1B01F最大工作频率：120MHZ
HN1B01F引脚数：6
HN1B01F最大耗散功率：
HN1B01F放大倍数：
HN1B01F图片代号：H-23
HN1B01Fvtest：50
HN1B01Fhtest：120000000
- HN1B01Fatest：0.15
HN1B01Fwtest：0
HN1B01F代换 HN1B01F用什么型号代替：
HN1B01F价格
参考价格：￥0.2037
型号：HN1B01FDW1T1G 品牌：ON 备注：这里有HN1B01F多少钱，2025年最近7天走势，今日出价，今日竞价，HN1B01F批发/采购报价，HN1B01F行情走势销售排行榜，HN1B01F报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HN1B01F | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Audio-Frequency General-PurposeAmplifier Applications Q1: High voltage and high current : VCEO= −50 V, IC = −150 mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1 mA) / hFE(IC= −2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCE | TOSHIBA 东芝 |   | |
HN1B01F | Audio-Frequency General-Purpose Amplifier Applications Audio-Frequency General-PurposeAmplifier Applications Q1: High voltage and high current : VCEO= −50 V, IC = −150 mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1 mA) / hFE(IC= −2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCE | TOSHIBA 东芝 | | |
HN1B01F | Audio-Frequency General-Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO= | TOSHIBA 东芝 | | |
HN1B01F | Audio-Frequency General-Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO= | TOSHIBA 东芝 | | |
HN1B01F | Transistor for low frequency small-signal amplification 2 in 1 | TOSHIBA 东芝 | | |
HN1B01F | Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications 文件：364.15 Kbytes Page：6 Pages | TOSHIBA 东芝 | | |
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200~400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A − Machine Model: C • Pb−F | ONSEMI 安森美半导体 | | ||
Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200~400 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: 3A − Machine Model: C • Pb−F | ONSEMI 安森美半导体 | | ||
Complementary Dual General Purpose Amplifier Transistor Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Features • High Voltage and High Current: VCEO = 50 V, IC = 200 mA • High hFE: hFE = 200~400 • Moisture Sensitivity Level: 1 • ESD Rating ♦ Human Body Model: 3A ♦ Machine Model: C • S Prefix for Automo | ONSEMI 安森美半导体 | | ||
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO= | TOSHIBA 东芝 | | ||
Audio-Frequency General-Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO= | TOSHIBA 东芝 | | ||
Audio-Frequency General-Purpose Amplifier Applications Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO= | TOSHIBA 东芝 | | ||
Audio-Frequency General-Purpose Amplifier Applications Audio-Frequency General-PurposeAmplifier Applications Q1: High voltage and high current : VCEO= −50 V, IC = −150 mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1 mA) / hFE(IC= −2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCE | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications 文件：364.15 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
NPN PNP 双极晶体管 | ONSEMI 安森美半导体 | | ||
Transistor for low frequency small-signal amplification 2 in 1 | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications 文件：362.98 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications 文件：362.98 Kbytes Page：6 Pages | TOSHIBA 东芝 | |
HN1B01F产品属性
- 类型
描述
- 型号
HN1B01F
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
SOT-363 |
47186 |
郑重承诺只做原装进口现货 |
|||
TOSHIBA |
24+ |
SOT-163SOT-23-6 |
54200 |
新进库存/原装 |
|||
TOSHIBA |
1922+ |
SOT-163 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
ON |
24+ |
SC74 |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
ON(安森美) |
24+ |
SC-74 |
21048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
SOT23-6 |
21+ |
TOSHIBA |
1200 |
十年信誉,只做原装,有挂就有现货! |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
TOSHIBA |
24+ |
SOT363 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
TOSHIBA/东芝 |
25+ |
SOT363 |
32000 |
TOSHIBA/东芝全新特价HN1B01FU-Y即刻询购立享优惠#长期有货 |
|||
TOSH |
23+ |
65480 |
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