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HN1B01F晶体管资料
HN1B01F别名：HN1B01F三极管、HN1B01F晶体管、HN1B01F晶体三极管
HN1B01F生产厂家：
HN1B01F制作材料：Si-N/P
HN1B01F性质：表面帖装型 （SMD）
HN1B01F封装形式：贴片封装
HN1B01F极限工作电压：50V
HN1B01F最大电流允许值：0.15A
HN1B01F最大工作频率：120MHZ
HN1B01F引脚数：6
HN1B01F最大耗散功率：
HN1B01F放大倍数：
HN1B01F图片代号：H-23
HN1B01Fvtest：50
HN1B01Fhtest：120000000
- HN1B01Fatest：0.15
HN1B01Fwtest：0
HN1B01F代换 HN1B01F用什么型号代替：
HN1B01F价格
参考价格：￥0.2037
型号：HN1B01FDW1T1G 品牌：ON 备注：这里有HN1B01F多少钱，2025年最近7天走势，今日出价，今日竞价，HN1B01F批发/采购报价，HN1B01F行情走势销售排行榜，HN1B01F报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HN1B01F | NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  |   |
HN1B01F | Audio-FrequencyGeneral-PurposeAmplifierApplications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
HN1B01F | Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
HN1B01F | Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
HN1B01F | SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications 文件：364.15 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
ComplementaryDualGeneralPurposeAmplifierTransistorPNPandNPNSurfaceMount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
ComplementaryDualGeneralPurposeAmplifierTransistorPNPandNPNSurfaceMount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryDualGeneralPurposeAmplifierTransistor ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating ♦HumanBodyModel:3A ♦MachineModel:C •SPrefixforAutomo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
Audio-FrequencyGeneral-PurposeAmplifierApplications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications 文件：364.15 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications 文件：362.98 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications 文件：362.98 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
HN1B01F产品属性
- 类型
描述
- 型号
HN1B01F
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
SOT363 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
TOSHIBA |
17+ |
SOT363 |
6200 |
100%原装正品现货 |
|||
ON/安森美 |
23+ |
NA |
5750 |
可订货 请确认 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON/安森美 |
24+ |
SC74-6 |
10000 |
全新原装现货库存 |
|||
TOSHIBA |
23+ |
SOT163 |
999999 |
原装正品现货量大可订货 |
|||
SOT23-6 |
21+ |
TOSHIBA |
1200 |
十年信誉,只做原装,有挂就有现货! |
|||
TOSHIBA |
2020+ |
SOT363 |
5856 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON(安森美) |
2021/2022+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
TOSHIBA/东芝 |
24+ |
SOT363 |
28347 |
只做全新原装进口现货 |
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DdatasheetPDF页码索引
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