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HN1B01F晶体管资料
HN1B01F别名：HN1B01F三极管、HN1B01F晶体管、HN1B01F晶体三极管
HN1B01F生产厂家：
HN1B01F制作材料：Si-N/P
HN1B01F性质：表面帖装型 （SMD）
HN1B01F封装形式：贴片封装
HN1B01F极限工作电压：50V
HN1B01F最大电流允许值：0.15A
HN1B01F最大工作频率：120MHZ
HN1B01F引脚数：6
HN1B01F最大耗散功率：
HN1B01F放大倍数：
HN1B01F图片代号：H-23
HN1B01Fvtest：50
HN1B01Fhtest：120000000
- HN1B01Fatest：.15
HN1B01Fwtest：0
HN1B01F代换 HN1B01F用什么型号代替：
HN1B01F价格
参考价格：￥0.2037
型号：HN1B01FDW1T1G 品牌：ON 备注：这里有HN1B01F多少钱，2024年最近7天走势，今日出价，今日竞价，HN1B01F批发/采购报价，HN1B01F行情走势销售排行榜，HN1B01F报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HN1B01F | NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   |
HN1B01F | Audio-FrequencyGeneral-PurposeAmplifierApplications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
HN1B01F | Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
HN1B01F | Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
HN1B01F | SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications 文件：364.15 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
ComplementaryDualGeneralPurposeAmplifierTransistorPNPandNPNSurfaceMount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
ComplementaryDualGeneralPurposeAmplifierTransistorPNPandNPNSurfaceMount ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:3A −MachineModel:C •Pb−F | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryDualGeneralPurposeAmplifierTransistor ComplementaryDualGeneralPurposeAmplifierTransistor PNPandNPNSurfaceMount Features •HighVoltageandHighCurrent:VCEO=50V,IC=200mA •HighhFE:hFE=200~400 •MoistureSensitivityLevel:1 •ESDRating ♦HumanBodyModel:3A ♦MachineModel:C •SPrefixforAutomo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio-FrequencyGeneral-PurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO= | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
Audio-FrequencyGeneral-PurposeAmplifierApplications Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications 文件：364.15 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications 文件：362.98 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications 文件：362.98 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
HN1B01F产品属性
- 类型
描述
- 型号
HN1B01F
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
20+ |
SC74 |
3000 |
原装现货 |
|||
TOSHIBA |
2020+ |
SOT-23- |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
T0SHIBA |
21+ |
SOT363 |
8888888 |
全新原装现货价格优惠可开票 |
|||
TOSHIBA |
23+ |
SOT163 |
20000 |
原厂原装正品现货 |
|||
TOSH |
02+ |
SOT26/ |
2890 |
全新原装进口自己库存优势 |
|||
TOSHIBA |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
|||
onsemi |
23+ |
SC-74,SOT-457 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
SOT23-6 |
21+ |
TOSHIBA |
1200 |
十年信誉,只做原装,有挂就有现货! |
|||
TOSHIBA |
23+ |
TO-232 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
SOT-363 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
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