提供复位功能和可编程输出电压的26 GHz 8分频器件，采用SMT封装

26 GHz, DIVIDE-BY-8 WITH RESET & PROGRAMMABLE OUTPUT VOLTAGE

文件：429.95 Kbytes Page：8 Pages

封装/外壳：16-LFCQFN 裸露焊盘 功能：除以 8 包装：托盘 描述：IC DIVIDE-BY-8 W/RESET 16SMD RF/IF，射频/中频和 RFID RF 其它 IC 和模块

封装/外壳：16-LFCQFN 裸露焊盘 功能：除以 8 包装：托盘 描述：IC DIVIDE-BY-8 W/RESET 16SMD RF/IF，射频/中频和 RFID RF 其它 IC 和模块

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment.

PNP general purpose transistors

DESCRIPTION PNP transistor in a SOT323 plastic package. NPN complements: BC849W and BC850W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier

Description: The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational amplifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low harmonic distortion and low noise make these devices ideally suited as amplifiers for high–

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages

NPN SILICON RF POWER TRANSISTOR

文件：155.82 Kbytes Page：6 Pages