提供可编程输出电压的14 Gbps 2:1差分选择器，采用SMT封装

丝印代码：H858；14 Gbps, 2:1 DIFFERENTIAL SELECTOR WITH PROGRAMMABLE OUTPUT VOLTAGE

Features Supports High Data Rates: up to 14 Gbps Differential or Single-Ended Operation Fast Rise and Fall Times: 19 / 20 ps Low Power Consumption: 221 mW typ. Programmable Differential Output Voltage Swing: 500 - 1300 mVp-p Propagation Delay: 87 ps Single Supply: -3.3 V 24 Lead Ceramic 4

封装/外壳：24-TFCQFN 裸露焊盘 包装：管件 描述：IC MULTIPLEXER 1 X 2:1 24QFN 集成电路（IC） 模拟开关 - 特殊用途

封装/外壳：24-TFCQFN 裸露焊盘 包装：管件 描述：IC MULTIPLEXER 1 X 2:1 24QFN 集成电路（IC） 模拟开关 - 特殊用途

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo