NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

800-960 MHz, 3.6 W (CW), 24 V RF Power Transistor, Class A

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

General Purpose Transistor

Features - For AF input stages and driver applications. - High current gain. - Low collector-emitter saturation voltage. - Low noise between 30Hz and 15kHz. - AEC-Q101 Qualified.

2 X 4 8-Pole Filters

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8-Bit Programmable

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