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型号 功能描述 生产厂家 企业 LOGO 操作
NTE858SM

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

NTE

NTE858SM

Integrated circuit. Dual, low - noise JFET - input operational amplifier.

\nDescription:\nThe NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low inpu

NTE

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

NTE

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

MOTOROLA

摩托罗拉

替换型号 功能描述 生产厂家 企业 LOGO 操作

DUAL J-FET INPUT OPERATIONAL AMPLIFIER

NJRC

日本无线

JFET INPUT OPERATIONAL AMPLIFIERS

ONSEMI

安森美半导体

GENERAL PURPOSE J-FET DUAL OPERATIONAL AMPLIFIERS

STMICROELECTRONICS

意法半导体

JFET-INPUT OPERATIONAL AMPLIFIERS

TI

德州仪器

JFET-INPUT OPERATIONAL AMPLIFIERS

TI

德州仪器

JFET-INPUT OPERATIONAL AMPLIFIERS

TI

德州仪器

JFET-INPUT OPERATIONAL AMPLIFIERS

TI

德州仪器

JEET-INPUT OPERTIONAL AMPLIFERS

TI

德州仪器

JFET-INPUT OPERATIONAL AMPLIFIERS

TI

德州仪器

JFET-INPUT OPERATIONAL AMPLIFIERS

TI

德州仪器

General purpose JFET dual operational amplifiers

STMICROELECTRONICS

意法半导体

JFET INPUT OPERATIONAL AMPLIFIERS

MOTOROLA

摩托罗拉

NTE858SM产品属性

  • 类型

    描述

  • 型号

    NTE858SM

  • 制造商

    NTE Electronics

  • 功能描述

    IC-LO NOISE JFET OP-AMP

  • 制造商

    NTE Electronics

  • 功能描述

    LINEAR IC

  • 制造商

    NTE Electronics

  • 功能描述

    OP Amp Dual GP ±18V 8-Pin SOIC

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
YAGEO
25+
N/A
59948
样件支持,可原厂排单订货!
YAGEO
25+
N/A
50000
正规渠道,免费送样。支持账期,BOM一站式配齐
量大可定NTE
20+
SOP8
49000
原装优势主营型号-可开原型号增税票
OTAX
DIP-3
35560
一级代理 原装正品假一罚十价格优势长期供货

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