| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM80N03 | N-Channel Enhancement Mode Power MOSFET 文件：589.54 Kbytes Page：7 Pages | HMSEMI 华之美半导体 |   | |
HM80N03 | N沟道中压大电流MOS(100V以下) | HMPOWERSEMI 虹美功率 | | |
N-Channel Enhancement Mode Power MOSFET 文件：847.52 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：608.48 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：517.62 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N沟道中压大电流MOS(100V以下) | HMPOWERSEMI 虹美功率 | | ||
N沟道中压大电流MOS(100V以下) | HMPOWERSEMI 虹美功率 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：680.6 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID | NEC 瑞萨 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | | ||
SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature | SIEMENS 西门子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HMI |
2450+ |
TO-220 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
HMSEMI |
23+ |
TO252 |
62388 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
VBsemi |
25+ |
TO251 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
HMSEMI |
2022+ |
TO-252 |
5000 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
DFN5X6-8L |
986966 |
国产 |
|||
VBSEMI/台湾微碧 |
24+ |
TO251 |
60000 |
全新原装现货 |
|||
VBsemi |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
H |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
HM80N03规格书下载地址
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HMA121CR3-全间距微型扁平封装4针光耦合器 HMA124，HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。 HMAA2705由两个砷化镓红外发光二极管反向并联连接，驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米 应用 HMAA2705 •交流线路监控 •未知极性直流传感器 •电话线接收器 HMA121系列，HMA2701系列，HMA124
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DdatasheetPDF页码索引
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