型号 功能描述 生产厂家&企业 LOGO 操作
HM628512C

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi
HM628512C

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HITACHI-METALS

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi Semiconductor

日立日立公司

Hitachi

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

WideTemperatureRangeVersion4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HITACHI-METALS

HM628512C产品属性

  • 类型

    描述

  • 型号

    HM628512C

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    4 M SRAM(512-kword x 8-bit)

更新时间:2025-7-25 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
3695
原装现货,当天可交货,原型号开票
NS
23+
DIP
6500
全新原装假一赔十
HITACHI/RENESAS
三年内
1983
只做原装正品
HITACHI
01+
TSSOP
47
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI/日立
22+
TSOP32
100000
代理渠道/只做原装/可含税
HITACHI/日立
25+
SOP32
54815
百分百原装现货,实单必成,欢迎询价
HITACHI/日立
24+
SOP-32
880000
明嘉莱只做原装正品现货
HIT
24+
SOP32
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
HITACHI
24+
TSSOP
2000
全新原装深圳仓库现货有单必成
HIT
01+
SOP32
393
全新原装进口自己库存优势

HM628512C芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • POWERBOX
  • RECTRON
  • SY
  • TAI-TECH
  • WINBOND

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    HMA121CR3-全间距微型扁平封装4针光耦合器HMA124,HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。HMAA2705由两个砷化镓红外发光二极管反向并联连接,驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米应用HMAA2705•交流线路监控•未知极性直流传感器•电话线接收器HMA121系列,HMA2701系列,HMA124

    2012-11-7