位置：首页 > IC中文资料第5886页 > HM628512C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM628512C | 4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 |   | |
HM628512C | 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | |
HM628512C | 4 M SRAM (512-kword ×8-bit) | RENESAS 瑞萨 | | |
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o | HitachiHitachi Semiconductor 日立日立公司 | | ||
524288-word x 8-bit High Speed CMOS Static RAM 文件：88.91 Kbytes Page：15 Pages | HITACHI-METALS 日立金属 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628512CI Series offers low power standby po | HitachiHitachi Semiconductor 日立日立公司 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power | RENESAS 瑞萨 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power | RENESAS 瑞萨 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628512CI Series offers low power standby po | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power | RENESAS 瑞萨 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628512CI Series offers low power standby po | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628512CI Series offers low power standby po | HitachiHitachi Semiconductor 日立日立公司 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mi | RENESAS 瑞萨 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil | HitachiHitachi Semiconductor 日立日立公司 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power | RENESAS 瑞萨 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The HM628512CI Series offers low power standby po | HitachiHitachi Semiconductor 日立日立公司 | | ||
Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit) Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing CMOS procss technology (6-transistor memory cell). The HM628512CI Series offers low power standby power | RENESAS 瑞萨 | | ||
Memory>Low Power SRAM | RENESAS 瑞萨 | | ||
Memory>Low Power SRAM | RENESAS 瑞萨 | | ||
4M SRAM (512 KWORD X 8 BIT) Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o | HitachiHitachi Semiconductor 日立日立公司 | | ||
524288-word x 8-bit High Speed CMOS Static RAM Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology. | HitachiHitachi Semiconductor 日立日立公司 | | ||
524288-word x 8-bit High Speed CMOS Static RAM 文件：88.91 Kbytes Page：15 Pages | HITACHI-METALS 日立金属 | |
HM628512C产品属性
- 类型
描述
- 型号
HM628512C
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
4 M SRAM(512-kword x 8-bit)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
3695 |
原装现货,当天可交货,原型号开票 |
|||
NS |
23+ |
DIP |
6500 |
全新原装假一赔十 |
|||
HIT |
01+ |
SOP32 |
393 |
全新原装进口自己库存优势 |
|||
hit |
23+ |
NA |
293 |
专做原装正品,假一罚百! |
|||
HITACHI/日立 |
22+ |
TSOP32 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI/日立 |
25+ |
SOP32 |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
HITACHI/日立 |
24+ |
SOP-32 |
880000 |
明嘉莱只做原装正品现货 |
|||
HITACHI/日立 |
25+ |
TSOP-32 |
32360 |
HITACHI/日立全新特价HM628512CLTT-5SL即刻询购立享优惠#长期有货 |
|||
HIT |
24+ |
SOP32 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
HITACHI |
01+ |
TSSOP |
47 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
HM628512C规格书下载地址
HM628512C参数引脚图相关
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- HM6288A
- HM6287P
- HM6287F
- HM6287A
- HM6287
- HM62864
- HM6286
- HM628512CLRRI-7
- HM628512CLRR-7SL
- HM628512CLRR-7
- HM628512CLRR-5SL
- HM628512CLRR-5
- HM628512CLPI-7
- HM628512CLP-7SL
- HM628512CLP-7
- HM628512CLP7
- HM628512CLP-5SL
- HM628512CLP-5
- HM628512CLFPI-7
- HM628512CLFPI-5
- HM628512CLFP-7SL
- HM628512CLFP-7
- HM628512CLFP-5SLTR
- HM628512CLFP-5SL
- HM628512CLFP-5
- HM628512CISERIES
- HM628512CI
- HM628512BSERIES
- HM628512BLTTI-8
- HM628512BLTTI-7
- HM628512BLTT-7UL
- HM628512BLTT-7SL
- HM628512BLTT-7
- HM628512BLTT-5UL
- HM628512BLTT-5SL
- HM628512BLTT-5
- HM628512BLRRI-8
- HM628512BLRRI-7
- HM628512BLRR-7UL
- HM628512BLRR-7SL
- HM628512BLRR-7
- HM628512BLRR-5UL
- HM628512BLRR-5
- HM628512BLPI-8
- HM628512BLPI-7
- HM628512BLP-7UL
- HM628512BLP-7SL
- HM6285
- HM6283B
- HM6283
- HM6281
- HM6268
- HM6267
- HM6264B
- HM6264A
- HM6264
- HM6246
- HM6245
- HM6239
- HM6238
- HM6237
- HM6235
- HM62256
- HM6224
- HM6220
- HM6218
- HM6217
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