型号 功能描述 生产厂家 企业 LOGO 操作
HM628512B

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

524288-word x 8-bit High Speed CMOS Static RAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALS

日立金属

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP. Features • Single 5 V supply • Access time: 55/70 ns

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP. Features • Single 5 V supply • Access time: 55/70 ns

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP. Features • Single 5 V supply • Access time: 55/70 ns

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

HitachiHitachi Semiconductor

日立日立公司

4M SRAM (512 KWORD X 8 BIT)

Description The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

HitachiHitachi Semiconductor

日立日立公司

524288-word x 8-bit High Speed CMOS Static RAM

Description The Hitachi HM628512AI is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

HitachiHitachi Semiconductor

日立日立公司

524288-word x 8-bit High Speed CMOS Static RAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALS

日立金属

HM628512B产品属性

  • 类型

    描述

  • 型号

    HM628512B

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    4 M SRAM(512-kword x 8-bit)

更新时间:2025-12-28 10:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
25+
SOP32
13800
原装,请咨询
HITACHI
2025+
SOP
5000
原装进口价格优 请找坤融电子!
HITACHI
SOP32
1000
原装长期供货!
HIT
20+
SMD
200
英卓尔科技,进口原装现货!
HITACHI
20+
TSOP
2860
原厂原装正品价格优惠公司现货欢迎查询
HIT
23+24
SOP32
9860
原厂原包装。终端BOM表可配单。可开13%增值税
HITACHI
24+
PDIP32
458
全部原装现货优势产品
HITACHI/日立
1824+
SOP
2699
原装现货专业代理,可以代拷程序
HITACHI
23+
SOP32
50000
全新原装正品现货,支持订货
HITACHI
24+
NA
3200
只做原装正品现货 欢迎来电查询15919825718

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    2012-11-7