型号 功能描述 生产厂家&企业 LOGO 操作
HM628512

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi
HM628512

524288-wordx8-bitHighSpeedCMOSStaticRAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HITACHI-METALS

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BFPisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Itispackagedinstandard32-pinSOP. Features •Single5Vsupply •Accesstime:55/70ns

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BFPisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Itispackagedinstandard32-pinSOP. Features •Single5Vsupply •Accesstime:55/70ns

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BFPisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Itispackagedinstandard32-pinSOP. Features •Single5Vsupply •Accesstime:55/70ns

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi, Ltd.

日立公司

Hitachi

HM628512产品属性

  • 类型

    描述

  • 型号

    HM628512

  • 制造商

    HITACHI-METALS

  • 制造商全称

    Hitachi Metals, Ltd

  • 功能描述

    524288-word x 8-bit High Speed CMOS Static RAM

更新时间:2024-5-26 18:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
TSOP-32
158071
明嘉莱只做原装正品现货
HITACHI
2022+
SOP-32
5957
HITACHI/日立
2024+实力库存
SOP-32
58
只做原厂渠道 可追溯货源
HIT
E411
DIP
58
HITACHI
SOP-32
265209
假一罚十原包原标签常备现货!
HITACHI
2022
SOP32
5575
原厂原装正品,价格超越代理
HITACHI
19+
TSOP
8427
RENESAS
2014+
3076
公司现货库存
HITACHI
21+
SOP-32
12000
进口原装正品现货
RAM
23+
DIP/SOP
5000
原装正品,假一罚十

HM628512芯片相关品牌

  • ANACHIP
  • BOTHHAND
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  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
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  • RECTRON
  • TAI-TECH
  • Winbond

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