型号 功能描述 生产厂家&企业 LOGO 操作
HM628512

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

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Hitachi
HM628512

524288-wordx8-bitHighSpeedCMOSStaticRAM

文件:88.91 Kbytes Page:15 Pages

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HITACHI-METALS

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BFPisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Itispackagedinstandard32-pinSOP. Features •Single5Vsupply •Accesstime:55/70ns

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BFPisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Itispackagedinstandard32-pinSOP. Features •Single5Vsupply •Accesstime:55/70ns

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BFPisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Itispackagedinstandard32-pinSOP. Features •Single5Vsupply •Accesstime:55/70ns

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

Hitachi

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi Semiconductor

日立日立公司

Hitachi

HM628512产品属性

  • 类型

    描述

  • 型号

    HM628512

  • 制造商

    HITACHI-METALS

  • 制造商全称

    Hitachi Metals, Ltd

  • 功能描述

    524288-word x 8-bit High Speed CMOS Static RAM

更新时间:2025-7-1 15:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
JAPAN
24+
PDIP
66800
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
日立
24+
SOP
19500
一级授权代理品牌进口原装现货假一赔十
HIT
20+
SMD
200
英卓尔科技,进口原装现货!
RAM
23+
DIP/SOP
5000
原装正品,假一罚十
IC
23+
DIP
18500
原厂授权一级代理,专业海外优势订货,价格优势、品种
HITACHI
24+
SOP
2560
绝对原装!现货热卖!
HITACHI
23+
TSOP
6322
特价库存
NA
24+
540
原装现货假一赔十
HITACHI
24+
DIP
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
HITACHI/日立
24+
N/P
16500
代理授权直销,原装现货,假一罚十,长期稳定供应

HM628512芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SAMWHA
  • TRUMPOWER
  • WPI
  • YANGJIE

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