位置:首页 > IC中文资料第8225页 > HM54
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
HM54 | High Current Toroidal Inductors 文件:1.15675 Mbytes Page:3 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | ||
HM54 | High Current Toroidal Inductors 文件:779.69 Kbytes Page:3 Pages | TTELECTT Electronics. 梯梯电子集成制造服务(苏州)有限公司 | ||
NPN EPITAXIAL PLANAR TRANSISTOR Description TheHM5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •Highcurrent-emitterbreakdownvoltage.VCEO=150V(@IC=1mA) •ComplementstoNPNtypeHM5551 | HSMC 华昕 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS) | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | |||
Inductive Cell Balancer IC with Balacing Curret Up to 2A 文件:7.40108 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Inductive Cell Balancer IC with Balacing Curret Up to 2A 文件:7.40108 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Inductive Cell Balancer IC with Balacing Curret Up to 2A 文件:7.40108 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1 Li-ion/Li-polymer battery charge balance IC 文件:642.98 Kbytes Page:8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1-Saving lithium iron phosphate battery charge balance IC 文件:959.53 Kbytes Page:10 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1-Saving lithium iron phosphate battery charge balance IC 文件:959.53 Kbytes Page:10 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1-Saving lithium iron phosphate battery charge balance IC 文件:959.53 Kbytes Page:10 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Built-in MOSFET lithium battery protection chip 文件:645.89 Kbytes Page:8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:671.19 Kbytes Page:6 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Two-in-one lithium battery protection IC 文件:495.67 Kbytes Page:6 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Single-cell Li-ion/Li-polymer rechargeable battery pack protection chip 文件:1.10702 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Built-in MOSFET lithium battery protection chip 文件:655.01 Kbytes Page:8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1 Li-ion/Li-polymer battery protection IC 文件:1.11857 Mbytes Page:12 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1 lithium-ion rechargeable battery pack 文件:625.78 Kbytes Page:13 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1-cell lithium polymer rechargeable battery pack 文件:722.59 Kbytes Page:13 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1 Li-ion/Li-polymer battery protection IC 文件:1.06608 Mbytes Page:14 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1 lithium iron phosphate battery protection IC 文件:1.03323 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1 Li-ion/Li-polymer battery protection IC 文件:2.37214 Mbytes Page:22 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
1 Li-ion/Li-polymer battery protection IC 文件:2.19647 Mbytes Page:26 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
2 lithium ion/lithium polymer battery protection IC 文件:1.29227 Mbytes Page:15 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
built-in high-precision voltage detection circuit 文件:380.48 Kbytes Page:7 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
built-in high-precision voltage detection circuit 文件:380.48 Kbytes Page:7 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
built-in high-precision voltage detection circuit 文件:380.48 Kbytes Page:7 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
2 lithium iron phosphate battery protection IC 文件:1.24301 Mbytes Page:16 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Dual-cell Li-ion/Li-polymer battery protection IC 文件:375.16 Kbytes Page:13 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
H User Manual V1.0 文件:622.31 Kbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Built-in MOSFET lithium battery protection chip 文件:738.85 Kbytes Page:8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
LiFePO4 battery 2-CELL Protector 文件:874.31 Kbytes Page:13 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Built-in high-precision voltage detection circuit built-in MOSFET 文件:573.01 Kbytes Page:7 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Built-in MOSFET lithium battery protection chip 文件:682.64 Kbytes Page:8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
single-cell lithium-ion/lithium polymer rechargeable battery packs 文件:1.39062 Mbytes Page:10 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:2.2072 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Lithium battery protection circuit 文件:766.25 Kbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
Built-in MOSFET lithium battery protection chip 文件:683.69 Kbytes Page:8 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:1.34716 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:3.06963 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Li-ion and Li-poly Battery Protection IC 文件:1.07858 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:761.6 Kbytes Page:7 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:1.31097 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:2.89917 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
One Cell Lithium-ion/Polymer Battery Protection IC 文件:1.31638 Mbytes Page:11 Pages | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
High Current Toroidal Inductors 文件:1.15675 Mbytes Page:3 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | |||
High Current Toroidal Inductors 文件:1.15675 Mbytes Page:3 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 | |||
High Current Toroidal Inductors 文件:779.69 Kbytes Page:3 Pages | TTELECTT Electronics. 梯梯电子集成制造服务(苏州)有限公司 | |||
High Current Toroidal Inductors 文件:1.15675 Mbytes Page:3 Pages | BITECH 瑞谷拜特上海瑞谷拜特软件技术有限公司 |
HM54产品属性
- 类型
描述
- 型号
HM54
- 制造商
BITECH
- 制造商全称
Bi technologies
- 功能描述
High Current Toroidal Inductors
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HM |
18+ |
SOT23-5 |
2598 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HSMC |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
HZM |
23+ |
SOT-25 |
326295 |
专业代理锂电保护IC优势产品 |
|||
华之美 |
24+ |
SOT23-5 |
880000 |
明嘉莱只做原装正品现货 |
|||
HM |
2048+ |
SOT23-6 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
ELPIDA |
22+ |
TSSOP |
6500 |
只做原装正品.或订货假一赔十! |
|||
HM54-60R86VLF |
1232 |
1232 |
|||||
原装HX |
2023+ |
SOT-89 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
HIT |
05+ |
原厂原装 |
4311 |
只做全新原装真实现货供应 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
HM54规格书下载地址
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- HM538254J-7
- HM538254BTT-8
- HM538254BTT-7
- HM538254BTT-10
- HM538254BJ-8
- HM538254BJ-7
- HM538254BJ-10
- HM538254B
- HM538253TT-8
- HM538253TT-7
- HM538253TT7
- HM538253TT-10
- HM538253RR-8
- HM538253RR-7
- HM538253RR-10
- HM538253J-8
- HM538253J-7
- HM538253J-10
- HM5350
- HM53461
- HM5344
- HM5338
- HM5336
- HM5333
- HM5330
- HM5328
- HM5327
- HM5325
- HM5321
- HM5318
- HM5315B
- HM5315A
- HM5315
- HM5312
HM54数据表相关新闻
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HMA121CR3-全间距微型扁平封装4针光耦合器HMA124,HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。HMAA2705由两个砷化镓红外发光二极管反向并联连接,驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米应用HMAA2705•交流线路监控•未知极性直流传感器•电话线接收器HMA121系列,HMA2701系列,HMA124
2012-11-7
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