High Current Toroidal Inductors

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High Current Toroidal Inductors

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NPN EPITAXIAL PLANAR TRANSISTOR

Description The HM5401 is designed for general purpose applications requiring high breakdown voltages. Features • High current-emitter breakdown voltage.VCEO=150V(@IC=1mA) • Complements to NPN type HM5551

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件：7.40108 Mbytes Page：11 Pages

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件：7.40108 Mbytes Page：11 Pages

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件：7.40108 Mbytes Page：11 Pages

锂电充电平衡IC

1 Li-ion/Li-polymer battery charge balance IC

文件：642.98 Kbytes Page：8 Pages

1-Saving lithium iron phosphate battery charge balance IC

文件：959.53 Kbytes Page：10 Pages

1-Saving lithium iron phosphate battery charge balance IC

文件：959.53 Kbytes Page：10 Pages

1-Saving lithium iron phosphate battery charge balance IC

文件：959.53 Kbytes Page：10 Pages

Built-in MOSFET lithium battery protection chip

文件：645.89 Kbytes Page：8 Pages

二合一锂电保护IC

二合一锂电保护IC

One Cell Lithium-ion/Polymer Battery Protection IC

文件：671.19 Kbytes Page：6 Pages

Two-in-one lithium battery protection IC

文件：495.67 Kbytes Page：6 Pages

Single-cell Li-ion/Li-polymer rechargeable battery pack protection chip

文件：1.10702 Mbytes Page：11 Pages

Built-in MOSFET lithium battery protection chip

文件：655.01 Kbytes Page：8 Pages

1 Li-ion/Li-polymer battery protection IC

文件：1.11857 Mbytes Page：12 Pages

1 lithium-ion rechargeable battery pack

文件：625.78 Kbytes Page：13 Pages

1-cell lithium polymer rechargeable battery pack

文件：722.59 Kbytes Page：13 Pages

1 Li-ion/Li-polymer battery protection IC

文件：1.06608 Mbytes Page：14 Pages

1 lithium iron phosphate battery protection IC

文件：1.03323 Mbytes Page：11 Pages

1 Li-ion/Li-polymer battery protection IC

文件：2.37214 Mbytes Page：22 Pages

1 Li-ion/Li-polymer battery protection IC

文件：2.19647 Mbytes Page：26 Pages

2 lithium ion/lithium polymer battery protection IC

文件：1.29227 Mbytes Page：15 Pages

built-in high-precision voltage detection circuit

文件：380.48 Kbytes Page：7 Pages

built-in high-precision voltage detection circuit

文件：380.48 Kbytes Page：7 Pages

built-in high-precision voltage detection circuit

文件：380.48 Kbytes Page：7 Pages

2 lithium iron phosphate battery protection IC

文件：1.24301 Mbytes Page：16 Pages

Dual-cell Li-ion/Li-polymer battery protection IC

文件：375.16 Kbytes Page：13 Pages

H User Manual V1.0

文件：622.31 Kbytes Page：11 Pages

Built-in MOSFET lithium battery protection chip

文件：738.85 Kbytes Page：8 Pages

LiFePO4 battery 2-CELL Protector

文件：874.31 Kbytes Page：13 Pages

Built-in high-precision voltage detection circuit built-in MOSFET

文件：573.01 Kbytes Page：7 Pages

Built-in MOSFET lithium battery protection chip

文件：682.64 Kbytes Page：8 Pages

single-cell lithium-ion/lithium polymer rechargeable battery packs

文件：1.39062 Mbytes Page：10 Pages

One Cell Lithium-ion/Polymer Battery Protection IC

文件：2.2072 Mbytes Page：11 Pages

Lithium battery protection circuit

文件：766.25 Kbytes Page：11 Pages

Built-in MOSFET lithium battery protection chip

文件：683.69 Kbytes Page：8 Pages

One Cell Lithium-ion/Polymer Battery Protection IC

文件：1.34716 Mbytes Page：11 Pages

One Cell Lithium-ion/Polymer Battery Protection IC

文件：3.06963 Mbytes Page：11 Pages

One Cell Li-ion and Li-poly Battery Protection IC

文件：1.07858 Mbytes Page：11 Pages

One Cell Lithium-ion/Polymer Battery Protection IC

文件：761.6 Kbytes Page：7 Pages

One Cell Lithium-ion/Polymer Battery Protection IC

文件：1.31097 Mbytes Page：11 Pages

One Cell Lithium-ion/Polymer Battery Protection IC

文件：2.89917 Mbytes Page：11 Pages

One Cell Lithium-ion/Polymer Battery Protection IC

文件：1.31638 Mbytes Page：11 Pages

High Current Toroidal Inductors

文件：1.15675 Mbytes Page：3 Pages