型号 功能描述 生产厂家&企业 LOGO 操作
HM54

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH
HM54

High Current Toroidal Inductors

文件:779.69 Kbytes Page:3 Pages

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHM5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •Highcurrent-emitterbreakdownvoltage.VCEO=150V(@IC=1mA) •ComplementstoNPNtypeHM5551

HSMC

华昕

HSMC

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件:7.40108 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件:7.40108 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件:7.40108 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery charge balance IC

文件:642.98 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-Saving lithium iron phosphate battery charge balance IC

文件:959.53 Kbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-Saving lithium iron phosphate battery charge balance IC

文件:959.53 Kbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-Saving lithium iron phosphate battery charge balance IC

文件:959.53 Kbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:645.89 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:671.19 Kbytes Page:6 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Two-in-one lithium battery protection IC

文件:495.67 Kbytes Page:6 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Single-cell Li-ion/Li-polymer rechargeable battery pack protection chip

文件:1.10702 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:655.01 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:1.11857 Mbytes Page:12 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 lithium-ion rechargeable battery pack

文件:625.78 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-cell lithium polymer rechargeable battery pack

文件:722.59 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:1.06608 Mbytes Page:14 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 lithium iron phosphate battery protection IC

文件:1.03323 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:2.37214 Mbytes Page:22 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:2.19647 Mbytes Page:26 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

2 lithium ion/lithium polymer battery protection IC

文件:1.29227 Mbytes Page:15 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

built-in high-precision voltage detection circuit

文件:380.48 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

built-in high-precision voltage detection circuit

文件:380.48 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

built-in high-precision voltage detection circuit

文件:380.48 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

2 lithium iron phosphate battery protection IC

文件:1.24301 Mbytes Page:16 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Dual-cell Li-ion/Li-polymer battery protection IC

文件:375.16 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

H User Manual V1.0

文件:622.31 Kbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:738.85 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

LiFePO4 battery 2-CELL Protector

文件:874.31 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in high-precision voltage detection circuit built-in MOSFET

文件:573.01 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:682.64 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

single-cell lithium-ion/lithium polymer rechargeable battery packs

文件:1.39062 Mbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:2.2072 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Lithium battery protection circuit

文件:766.25 Kbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:683.69 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:1.34716 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:3.06963 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Li-ion and Li-poly Battery Protection IC

文件:1.07858 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:761.6 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:1.31097 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:2.89917 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:1.31638 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH

High Current Toroidal Inductors

文件:779.69 Kbytes Page:3 Pages

TTELECTT Electronics.

梯梯电子集成制造服务(苏州)有限公司

TTELEC

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH

HM54产品属性

  • 类型

    描述

  • 型号

    HM54

  • 制造商

    BITECH

  • 制造商全称

    Bi technologies

  • 功能描述

    High Current Toroidal Inductors

更新时间:2024-5-15 20:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HM
18+
SOT23-5
2598
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HSMC
22+
SOT-89
100000
代理渠道/只做原装/可含税
HZM
23+
SOT-25
326295
专业代理锂电保护IC优势产品
华之美
24+
SOT23-5
880000
明嘉莱只做原装正品现货
HM
2048+
SOT23-6
9852
只做原装正品现货!或订货假一赔十!
ELPIDA
22+
TSSOP
6500
只做原装正品.或订货假一赔十!
HM54-60R86VLF
1232
1232
原装HX
2023+
SOT-89
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
HIT
05+
原厂原装
4311
只做全新原装真实现货供应
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!

HM54芯片相关品牌

  • AVAGO
  • DAESAN
  • HONEYWELL-ACC
  • HUBERSUHNER
  • IXYS
  • LITEON
  • Micron
  • MMD
  • NJSEMI
  • ROSENBERGER
  • Vicor
  • WALL

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