型号 功能描述 生产厂家&企业 LOGO 操作
HM54

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECHBi technologies

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH
HM54

High Current Toroidal Inductors

文件:779.69 Kbytes Page:3 Pages

TTELECTT Electronics.

TT电子公司梯梯电子集成制造服务(苏州)有限公司

TTELEC

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHM5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •Highcurrent-emitterbreakdownvoltage.VCEO=150V(@IC=1mA) •ComplementstoNPNtypeHM5551

HSMCHi-Sincerity Mocroelectronics

华昕华昕科技有限公司

HSMC

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description TheHM5425161B,theHM5425801BandtheHM5425401BaretheDoubleDataRate(DDR)SDRAMdevices.ReadandwriteoperationsareperformedatthecrosspointsoftheCLKandtheCLK.Thishighspeeddatatransferisrealizedbythe2-bitprefetchpiplinedarchitecture.Datastrobe(DQS)

ELPIDAElpida Memory

美光科技美光科技股份有限公司

ELPIDA

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件:7.40108 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件:7.40108 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Inductive Cell Balancer IC with Balacing Curret Up to 2A

文件:7.40108 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery charge balance IC

文件:642.98 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-Saving lithium iron phosphate battery charge balance IC

文件:959.53 Kbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-Saving lithium iron phosphate battery charge balance IC

文件:959.53 Kbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-Saving lithium iron phosphate battery charge balance IC

文件:959.53 Kbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:645.89 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:671.19 Kbytes Page:6 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Two-in-one lithium battery protection IC

文件:495.67 Kbytes Page:6 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Single-cell Li-ion/Li-polymer rechargeable battery pack protection chip

文件:1.10702 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:655.01 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:1.11857 Mbytes Page:12 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 lithium-ion rechargeable battery pack

文件:625.78 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1-cell lithium polymer rechargeable battery pack

文件:722.59 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:1.06608 Mbytes Page:14 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 lithium iron phosphate battery protection IC

文件:1.03323 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:2.37214 Mbytes Page:22 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

1 Li-ion/Li-polymer battery protection IC

文件:2.19647 Mbytes Page:26 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

2 lithium ion/lithium polymer battery protection IC

文件:1.29227 Mbytes Page:15 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

built-in high-precision voltage detection circuit

文件:380.48 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

built-in high-precision voltage detection circuit

文件:380.48 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

built-in high-precision voltage detection circuit

文件:380.48 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

2 lithium iron phosphate battery protection IC

文件:1.24301 Mbytes Page:16 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Dual-cell Li-ion/Li-polymer battery protection IC

文件:375.16 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

H User Manual V1.0

文件:622.31 Kbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:738.85 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

LiFePO4 battery 2-CELL Protector

文件:874.31 Kbytes Page:13 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in high-precision voltage detection circuit built-in MOSFET

文件:573.01 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:682.64 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

single-cell lithium-ion/lithium polymer rechargeable battery packs

文件:1.39062 Mbytes Page:10 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:2.2072 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Lithium battery protection circuit

文件:766.25 Kbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

Built-in MOSFET lithium battery protection chip

文件:683.69 Kbytes Page:8 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:1.34716 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:3.06963 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Li-ion and Li-poly Battery Protection IC

文件:1.07858 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:761.6 Kbytes Page:7 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:1.31097 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:2.89917 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

One Cell Lithium-ion/Polymer Battery Protection IC

文件:1.31638 Mbytes Page:11 Pages

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECHBi technologies

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECHBi technologies

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH

High Current Toroidal Inductors

文件:779.69 Kbytes Page:3 Pages

TTELECTT Electronics.

TT电子公司梯梯电子集成制造服务(苏州)有限公司

TTELEC

High Current Toroidal Inductors

文件:1.15675 Mbytes Page:3 Pages

BITECHBi technologies

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH

HM54产品属性

  • 类型

    描述

  • 型号

    HM54

  • 制造商

    BITECH

  • 制造商全称

    Bi technologies

  • 功能描述

    High Current Toroidal Inductors

更新时间:2025-7-6 20:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HM
18+
SOT23-5
2598
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HSMC
22+
SOT-89
100000
代理渠道/只做原装/可含税
华昕
24+
NA/
3520
原装现货,当天可交货,原型号开票
华之美
24+
SOT23-5
880000
明嘉莱只做原装正品现货
24+
QFP
20
HM54-60R86VLF
1232
1232
23+
SOT-89
10000
原装正品,假一罚十
华昕
24+
SOT-89
9600
原装现货,优势供应,支持实单!
原装HX
23+
SOT-89
5000
专注配单,只做原装进口现货
NK/南科功率
2025+
SOT-89
986966
国产

HM54芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

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    HMA121CR3-全间距微型扁平封装4针光耦合器HMA124,HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。HMAA2705由两个砷化镓红外发光二极管反向并联连接,驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米应用HMAA2705•交流线路监控•未知极性直流传感器•电话线接收器HMA121系列,HMA2701系列,HMA124

    2012-11-7