型号 功能描述 生产厂家 企业 LOGO 操作
HM5425

LiFePO4 battery 2-CELL Protector

文件:874.31 Kbytes Page:13 Pages

HMSEMI

华之美半导体

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 횞 16-bit 횞 4-bank/8-Mword 횞 8-bit 횞 4-bank/ 16-Mword 횞 4-bit 횞 4-bank

Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS)

ELPIDA

尔必达

256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword ?16-bit ?4-bank/8-Mword ?8-bit ?4-bank/ 16-Mword ?4-bit ?4-bank

MICRON

美光

8-Bit, High Bandwidth Multiplying DAC with Serial Interface

GENERAL DESCRIPTION The AD54251 is a CMOS, 8-bit, current output digital-to-analog converter (DAC) that operates from a 2.5 V to 5.5 V power supply, making it suitable for battery-powered applications and many other applications. FEATURES 2.5 V to 5.5 V supply operation 50 MHz serial int

AD

亚德诺

8-Bit, High Speed, Multiplying D/A Converter (Universal Digital Logic Interface)

GENERAL DESCRIPTION The DAC08 series of 8-bit monolithic digital-to-analog convert ers provide very high-speed performance coupled with low cost and outstanding applications flexibility. FEATURES Fast Settling Output Current: 85 ns Full-Scale Current Prematched to ±1 LSB Dir

AD

亚德诺

Full Thickness Male Blades

文件:380.72 Kbytes Page:2 Pages

HEYCO

Dual 4-Input NOR Gate (with Strobe)

文件:93.9 Kbytes Page:2 Pages

NSC

国半

CUSTOMER PRODUCT SPECIFICATION

文件:80.86 Kbytes Page:2 Pages

ALPHAWIRE

HM5425产品属性

  • 类型

    描述

  • 型号

    HM5425

  • 制造商

    ELPIDA

  • 制造商全称

    Elpida Memory

  • 功能描述

    256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank

更新时间:2026-1-28 13:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
华之美
24+
SOT23-5
880000
明嘉莱只做原装正品现货
HM54-60R86VLF
25+
1232
1232
HZM
24+
SOT-25
326295
专业代理锂电保护IC优势产品
华昕
24+
SOT-89
9600
原装现货,优势供应,支持实单!
HM
24+
SOT236
90000
郑重承诺只做原装进口现货
最新
2000
原装正品现货
HM
23+
SOT23-5
50000
全新原装正品现货,支持订货
ST
2511
QFN
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
INTEL
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
华昕
23+
SOT-89
50000
原装正品 支持实单

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