| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Plastic Medium Power Silicon PNP Transistor Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179 | MOTOROLA 摩托罗拉 |   | ||
POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS | MOSPEC 统懋 | | ||
Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent | NTE | | ||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | | ||
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-225 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi |
25+ |
TO-126 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
25+ |
TO-126 |
45000 |
ONSEMI/安森美全新现货BD180即刻询购立享优惠#长期有排单订 |
|||
ON/安森美 |
2026+ |
TO-126 |
2361 |
原装正品,假一罚十! |
|||
ON |
12+ |
TO-126 |
1890 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ONSEMI |
24+/25+ |
140 |
原装正品现货库存价优 |
||||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON/安森美 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
FAIRCHILD/仙童 |
23+ |
TO126 |
28888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
HIS-180规格书下载地址
HIS-180参数引脚图相关
- id卡
- ic元器件
- ic元件
- ic型号
- ic行业
- ic网
- ic市场
- ic设计
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- hl2608
- HJ1609
- HJ1538
- HJ14C
- HJ127
- HJ122
- HJ117
- HJ112
- HJ1109
- HJ10387
- HJ-0.3K
- HIU45
- HITACHI
- HIT673
- HIT667
- HIT647
- HIT562
- HIT468
- HIT1577
- HIT1213
- HIT-100
- HIS-3-12/4-PEX-CL
- HIS-3-12/4-PEX-BU
- HIS-312/4MIX
- HIS-312/4CLR
- HIS-312/4BLU
- HIS-312/4BLK
- HIS-31.5/0.5RED
- HIS-31.5/0.5GRY
- HIS-31.5/0.5G/Y
- HIS-31.5/0.5CLR
- HIS-31.5/0.5BRN
- HIS-31.5/0.5BLU
- HIS-31.5/0.5BLK
- HIS-3-1,5/0,5-PEX-RD
- HIS-3-1,5/0,5-PEX-CL
- HIS-3-1,5/0,5-PEX-BU
- HIS302
- HI-S3-01
- HIS2ASIC
- HIS240
- HIS1101LF
- HIS-07
- HIS-06-N
- HIS-06N
- HIS-06K-N
- HIS-06K
- HIS-06
- HIS-05-N
- HIS0209A
- HIS-02
- HIS0191B
- HIS0191A
- HIS0169C
- HIS0169B
- HiS0169A
- HIS0161A
- HIRTS-1
- HIRSHMANN
- HIRPMSD000C/FLINT01
- HIRPCN10-50P-2.54DSA(72)
- HIRP200
- HIRF840
- HIRF830
- HIRF740
- HIRF730
- HIRF630
- HIR-A07
- HIR8323
- HIR383C
- HIR333C
- HIR333
- HIR323C
- HIR313C
- HIR234C
- HIR204C
- HIR204
- HIP9022
- HIP9021
- HIP9020
- HIP9011
HIS-180数据表相关新闻
Hirose、TE.JST、JAE、AMP等品牌原装进口连接器材！
Hirose、JST、JAE、AMP、等品牌原装进口连接器材！
2021-9-17HK32F103C8T6
HK32F103C8T6
2021-6-2HISILICON海思 HI3519ARFCV100
HISILICON海思 HI3519ARFCV100
2020-8-28HK4100F-DC12V-SHG
HK4100F-DC12V-SHG，当天发货0755-82732291全新原装现货或门市自取.
2020-8-14HIP6603-同步整流降压MOSFET驱动器
同步整流MOSFET的降压驱动程序 HIP6601和HIP6603的高频率，双MOSFET驱动器专门设计用于驱动两个功率N沟道MOSFET在同步整流降压转换器。与HIP630x结合这些驱动程序多相降压PWM控制器和Intersil UltraFETs™形成一个完整的核心电压调节器解决方案先进的微处理器。驱动的HIP6601在同步整流更低的栅极大桥至12V，而高门可以独立推动在一个范围从5V至12V。驱动器的HIP6603以上为5V至12V范围内的上下门。这驱动电压的灵活性提供了优化的优势应用领域涉及开关损耗之间的权衡 和传导损耗。在HIP6601和HI
2013-3-3HIP6602-双通道同步整流降压MOSFET驱动器
双通道同步整流降压MOSFET驱动器 该HIP6602是一个高频率，两间电力通道MOSFET驱动器专门设计用于驱动四个电源N沟道MOSFET在同步整流降压转换器。与HIP63xx结合这些驱动程序系列多相降压PWM控制器和Intersil的UltraFETs®形成一个完整的核心电压稳压器解决方案先进的微处理器。在驱动器的HIP6602上下都是一个盖茨范围为5V至12V。这个驱动电压提供了灵活性优化应用程序中受益，涉及权衡之间的开关损耗和传导损耗。在HIP6602输出驱动器有能力在高效率开关频率功率MOSFET。每个司机是驾驶一辆带有30ns一个3000pF负载的能力传播
2013-3-3
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
