位置：首页 > IC中文资料第890页 > HGTP7N60B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
14A,600V,UFSSeriesN-ChannelIGBTs TheHGTD7N60B3S,HGT1S7N60B3SandHGTP7N60B3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevo | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   | |
14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 14A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
7.4Amps,600VoltsN-CHANNELMOSFET ■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
iscN-ChannelMosfetTransistor •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
7Amps竊?00VoltsN-ChannelMOSFET ■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 |  | | |
7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET ■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
7A600VN-channelEnhancementModePowerMOSFET 文件：898.89 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | |
HGTP7N60B产品属性
- 类型
描述
- 型号
HGTP7N60B
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHILD |
21+ |
35200 |
一级代理/放心采购 |
||||
FAIRCHILD品牌 |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
INTERSIL |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
Intersil |
08+(pbfree) |
TO-220 |
8866 |
||||
ON-安森美 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
FAIRCHILD |
23+ |
TO-220 |
9526 |
||||
ON/安森美 |
2410+ |
TO-220 |
336 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
INTERSIL |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
FAIRCHILD |
22+ |
TO-220 |
8900 |
英瑞芯只做原装正品!!! |
HGTP7N60B芯片相关品牌
HGTP7N60B规格书下载地址
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