6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：394.42 Kbytes Page：11 Pages

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：394.42 Kbytes Page：11 Pages

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

6A, 600V, UFS Series N-Channel IGBTs

Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v