型号 功能描述 生产厂家 企业 LOGO 操作
HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Intersil

HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

HARRIS

HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Fairchild

仙童半导体

HGTD3N60C3S

6A, 600V, UFS Series N-Channel IGBTs

ONSEMI

安森美半导体

6A, 600V, UFS Series N-Channel IGBTs

Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

HARRIS

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Fairchild

仙童半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IGBT 600V 6A 33W TO252AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Fairchild

仙童半导体

HGTD3N60C3S产品属性

  • 类型

    描述

  • 型号

    HGTD3N60C3S

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2025-10-19 15:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Fairchild/ON
23+
TO252AA
7000
FAIRCHIL
24+
TO-252
8866
INTERSIL
22+
TO-251-3
6000
十年配单,只做原装
FAIRCHILD/仙童
23+
67780
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRC
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
INTERSIL
23+
TO-251-3
50000
全新原装正品现货,支持订货
INTERSIL
25+
TO-251-3
450
就找我吧!--邀您体验愉快问购元件!
INTERSIL
06+
原厂原装
5132
只做全新原装真实现货供应
FSC/ON
23+
原包装原封 □□
11451
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
FAIRCHILD/仙童
24+
TO-252(DPAK)
30000
只做正品原装现货

HGTD3N60C3S数据表相关新闻