型号 功能描述 生产厂家&企业 LOGO 操作
HGTP3N60C3

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Intersil

HGTP3N60C3

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much

HARRIS

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Intersil

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:394.42 Kbytes Page:11 Pages

HARRIS

6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:394.42 Kbytes Page:11 Pages

HARRIS

6A, 600V, UFS Series N-Channel IGBTs

Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

HARRIS

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6A, 600V, UFS Series N-Channel IGBTs

The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

Intersil

6A, 600V, UFS Series N-Channel IGBTs

Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

HARRIS

HGTP3N60C3产品属性

  • 类型

    描述

  • 型号

    HGTP3N60C3

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2025-8-8 15:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHI
21+
TO-220
12588
原装正品,自己库存 假一罚十
HARRIS
24+
SOT-5241&NBS
3200
只做原装正品现货 欢迎来电查询15919825718
FAIRCHI
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
INFINEON/英飞凌
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
仙童/INTERSI
23+
TO-220
5000
专注配单,只做原装进口现货
仙童/INTERSI
23+
TO-220
5000
专注配单,只做原装进口现货
FAIRCHILD
23+
TO-220
9526
INTERSIL
05+
原厂原装
5070
只做全新原装真实现货供应
Intersil
24+
TO-220
8866
2020+
6500
百分百原装正品 真实公司现货库存 本公司只做原装 可

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