位置：首页 > IC中文资料第1978页 > HGTP3N60C3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP3N60C3 | 6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation |  |   |
HGTP3N60C3 | 6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch | HARRIS Harris Corporation |  | | |
6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation | | | |
6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 文件：394.42 Kbytes Page：11 Pages | HARRIS Harris Corporation | | | |
6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 文件：394.42 Kbytes Page：11 Pages | HARRIS Harris Corporation | | | |
6A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | HARRIS Harris Corporation | | | |
6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
6A,600V,UFSSeriesN-ChannelIGBTs TheHGTD3N60C3SandtheHGTP3N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop | Intersil Intersil Corporation | | | |
6A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTD3N60C3andHGTD3N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev | HARRIS Harris Corporation | | |
HGTP3N60C3产品属性
- 类型
描述
- 型号
HGTP3N60C3
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
TO-220 |
9526 |
||||
Intersil |
24+ |
TO-220 |
8866 |
||||
INTERSIL |
2023+ |
SMD |
800 |
安罗世纪电子只做原装正品货 |
|||
FAIRCHI |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
HARRIS/哈里斯 |
23+ |
59680 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
仙童/INTERSI |
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
|||
仙童/INTERSI |
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
|||
2020+ |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
FAIRCHILD/仙童 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
HGTP3N60C3芯片相关品牌
HGTP3N60C3规格书下载地址
HGTP3N60C3参数引脚图相关
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