位置:首页 > IC中文资料第1978页 > HGTP3N60C3
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
HGTP3N60C3 | 6A, 600V, UFS Series N-Channel IGBTs The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | Intersil | ||
HGTP3N60C3 | 6A, 600V, UFS Series N-Channel IGBTs The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much | HARRIS | |||
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | Intersil | |||
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件:394.42 Kbytes Page:11 Pages | HARRIS | |||
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件:394.42 Kbytes Page:11 Pages | HARRIS | |||
6A, 600V, UFS Series N-Channel IGBTs Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v | HARRIS | |||
6A, 600V, UFS Series N-Channel IGBTs The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
6A, 600V, UFS Series N-Channel IGBTs The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop | Intersil | |||
6A, 600V, UFS Series N-Channel IGBTs Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v | HARRIS |
HGTP3N60C3产品属性
- 类型
描述
- 型号
HGTP3N60C3
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHI |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
HARRIS |
24+ |
SOT-5241&NBS |
3200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHI |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
INFINEON/英飞凌 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
仙童/INTERSI |
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
|||
仙童/INTERSI |
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD |
23+ |
TO-220 |
9526 |
||||
INTERSIL |
05+ |
原厂原装 |
5070 |
只做全新原装真实现货供应 |
|||
Intersil |
24+ |
TO-220 |
8866 |
||||
2020+ |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
HGTP3N60C3规格书下载地址
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HGTP3N60C3数据表相关新闻
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2019-8-21
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