位置：首页 > IC中文资料第6262页 > HGTP11N120CN
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP11N120CN | 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
HGTP11N120CN | 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Intersil | | |
43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Intersil | | ||
43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b | Intersil | |
HGTP11N120CN产品属性
- 类型
描述
- 型号
HGTP11N120CN
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
43A, 1200V, NPT Series N-Channel IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
15638 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD |
23+ |
TO-220 |
9526 |
||||
HAR |
23+ |
65480 |
|||||
FAIRCHILD |
24+ |
TO-220-3 |
8866 |
||||
INTERSIL |
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
|||
INTERSIL |
23+ |
TO-220 |
5000 |
专注配单,只做原装进口现货 |
|||
英特锡尔 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Fairchild/ON |
23+ |
TO220AB |
7000 |
||||
INTERSIL |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
恩XP |
23+ |
TO220 |
69820 |
终端可以免费供样,支持BOM配单! |
HGTP11N120CN芯片相关品牌
HGTP11N120CN规格书下载地址
HGTP11N120CN参数引脚图相关
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HGTP11N120CN数据表相关新闻
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2019-8-21
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