位置：首页 > IC中文资料第6262页 > HGTP11N120CN
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP11N120CN | 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Fairchild 仙童半导体 |   | |
HGTP11N120CN | 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Intersil | | |
43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Fairchild 仙童半导体 | | ||
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b | Fairchild 仙童半导体 | | ||
43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Intersil | | ||
43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Fairchild 仙童半导体 | | ||
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b | Intersil | |
HGTP11N120CN产品属性
- 类型
描述
- 型号
HGTP11N120CN
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
43A, 1200V, NPT Series N-Channel IGBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
15638 |
原装现货,当天可交货,原型号开票 |
|||
FSC |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FSC |
09+ |
TO-220 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHIL |
23+ |
TO-220 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
FAIRCHILD |
24+ |
TO-220-3 |
8866 |
||||
HARRIS |
05+ |
原厂原装 |
7786 |
只做全新原装真实现货供应 |
|||
FAIRCHILD |
NEW |
TO-220 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
HAR |
23+ |
65480 |
|||||
英特锡尔 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Fairchild/ON |
23+ |
TO220AB |
7000 |
HGTP11N120CN芯片相关品牌
HGTP11N120CN规格书下载地址
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HGTP11N120CN数据表相关新闻
HGTG11N120CND绝对全新原装正品特价销售
HGTG11N120CND 绝对全新原装正品特价销售
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2020-11-25HHM1517 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
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2019-8-21
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