型号 功能描述 生产厂家 企业 LOGO 操作
HGTP11N120CN

43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP11N120CN

43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo

Intersil

43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo

Intersil

43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b

Intersil

HGTP11N120CN产品属性

  • 类型

    描述

  • 型号

    HGTP11N120CN

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    43A, 1200V, NPT Series N-Channel IGBT

更新时间:2025-10-2 14:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAR
23+
65480
FSC
09+
TO-220
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INTERSIL
22+
TO-220
6000
十年配单,只做原装
FAIRCHILD
NEW
TO-220
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
英特锡尔
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
恩XP
23+
TO220
69820
终端可以免费供样,支持BOM配单!
INTERSIL
23+
TO-220
5000
专注配单,只做原装进口现货
FAIRCHILD
24+
TO-220-3
8866
HARRIS
05+
原厂原装
7786
只做全新原装真实现货供应

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