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HGTG11N120CN价格
参考价格：￥13.3116
型号：HGTG11N120CND 品牌：FAIRCHILD 备注：这里有HGTG11N120CN多少钱，2025年最近7天走势，今日出价，今日竞价，HGTG11N120CN批发/采购报价，HGTG11N120CN行情走势销售排行榜，HGTG11N120CN报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG11N120CN | 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Fairchild 仙童半导体 |   | |
HGTG11N120CN | 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Intersil | | |
HGTG11N120CN | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 43A 298W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
HGTG11N120CN | IGBT 1200V 43A 298W TO247 | ONSEMI 安森美半导体 | | |
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b | Fairchild 仙童半导体 | | ||
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b | Intersil | | ||
NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件：437.08 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT NPT 1200V 43A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | RENESAS 瑞萨 | | ||
1200 V NPT IGBT | ONSEMI 安森美半导体 | | ||
43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the lo | Fairchild 仙童半导体 | | ||
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a b | Fairchild 仙童半导体 | |
HGTG11N120CN产品属性
- 类型
描述
- 型号
HGTG11N120CN
- 功能描述
IGBT 晶体管 43A 1200V N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI/安森美 |
25+ |
TO-247 |
32000 |
ONSEMI/安森美全新特价HGTG11N120CND即刻询购立享优惠#长期有货 |
|||
ONSemi |
1939+ |
TO-247-3 |
170 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
598 |
原装进口特价供应 特价，原装元器件供应，支持开发样品 更多详细咨询 库存 |
|||
ON/安森美 |
24+ |
TO-247(AC) |
30000 |
原装正品公司现货,假一赔十! |
|||
25+ |
TO-247 |
18000 |
原厂直接发货进口原装 |
||||
ONN |
2526+ |
原厂封装 |
450 |
只做原装优势现货库存 渠道可追溯 |
|||
FAIRCHILD |
14 |
TO-247 |
6000 |
绝对原装自己现货 |
|||
ON |
21+ |
TO-247 |
1800 |
21+ |
|||
FAIRCHILD/仙童 |
25+ |
TO247 |
15000 |
全新原装现货,假一赔十 |
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HGTG11N120CN数据表相关新闻
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