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HGTG11N120CN价格
参考价格：￥13.3116
型号：HGTG11N120CND 品牌：FAIRCHILD 备注：这里有HGTG11N120CN多少钱，2024年最近7天走势，今日出价，今日竞价，HGTG11N120CN批发/采购报价，HGTG11N120CN行情走势销售排行榜，HGTG11N120CN报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG11N120CN | 43A,1200V,NPTSeriesN-ChannelIGBT TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   |
HGTG11N120CN | 43A,1200V,NPTSeriesN-ChannelIGBT TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
HGTG11N120CN | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 43A 298W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
43A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG11N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofab | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
43A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG11N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofab | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 文件：437.08 Kbytes Page：10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT NPT 1200V 43A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
43A,1200V,NPTSeriesN-ChannelIGBT TheHGTG11N120CN,HGTP11N120CN,andHGT1S11N120CNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
43A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG11N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofab | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG11N120CN产品属性
- 类型
描述
- 型号
HGTG11N120CN
- 功能描述
IGBT 晶体管 43A 1200V N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
23+ |
NA/ |
38 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FSC |
2020+ |
TO-3P |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
fsc |
22+ |
500000 |
行业低价,代理渠道 |
||||
FAIRCHILD |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
FAIRCHILD/仙童 |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHIL |
23+ |
TO247 |
9526 |
||||
onsemi(安森美) |
23+ |
TO2473 |
6000 |
||||
ON |
21+ |
TO-247 |
1800 |
21+ |
|||
ON/安森美 |
22+ |
TO-247 |
10000 |
绝对原装现货热卖 |
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HGTG11N120CN规格书下载地址
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HGTG11N120CN数据表相关新闻
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DdatasheetPDF页码索引
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