型号 功能描述 生产厂家 企业 LOGO 操作
HGTG24N60D1D

24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

Intersil

HGTG24N60D1D

24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

RENESAS

瑞萨

24A, 600V N-Channel IGBT

Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode

Intersil

HGTG24N60D1D产品属性

  • 类型

    描述

  • 型号

    HGTG24N60D1D

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

  • 制造商

    Harris Corporation

更新时间:2025-11-1 17:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
仙童
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
FAIRCHILD/仙童
23+
TO-247
110500
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
INTESIL
23+
TO-3P
8000
专做原装正品,假一罚百!
FAIRCHILD
25+23+
TO-247
19016
绝对原装正品全新进口深圳现货
Intersil
24+
TO-247
8866
FAIRCHILD
24+
TO-247
622
全新原装环保
FAIRCHILD
22+
TO-247
5000
全新原装现货!自家库存!
INTERSIL
17+
TO-3P
6200
原厂
23+
TO247
5000
原装正品,假一罚十

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